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TSG60N100

Description
N-Channel IGBT with FRD.
File Size412KB,9 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet View All

TSG60N100 Overview

N-Channel IGBT with FRD.

TSG60N100CE
N-Channel IGBT with FRD.
TO-264
Pin Definition:
1. Gate
2. Collector
3. Emitter
PRODUCT SUMMARY
V
CES
(V)
1000
V
GES
(V)
±20
I
C
(A)
60
General Description
The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers
superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This
device is well suited for the resonant or soft switching application such as induction heating, microwave oven,
etc.
Features
1000V NPT Trench Technology
High Speed Switching
Low Conduction Loss
Block Diagram
Ordering Information
Part No.
TSG60N100CE C0
Package
TO-264
Packing
25pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
Pulsed Collector Current *
Diode Continuous Forward Current (T
C
=100
)
Max Power Dissipation
Operating Junction Temperature
Storage Temperature Range
* Repetitive rating: Pulse width limited by max. junction temperature
T
J
=25 C
T
J
=100 C
o
o
Symbol
V
CES
V
GES
T
C
=25 C
T
C
=100 C
o
o
Limit
1000
±20
60
Unit
V
V
A
A
A
A
W
I
C
I
CM
I
F
P
D
T
J
T
STG
42
200
15
208
83
-55 to +150
-55 to +150
ºC
o
C
1/9
Version: B12
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