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M53230404CT0-C50

Description
EDO DRAM Module, 4MX32, 50ns, CMOS, SIMM-72
Categorystorage    storage   
File Size424KB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

M53230404CT0-C50 Overview

EDO DRAM Module, 4MX32, 50ns, CMOS, SIMM-72

M53230404CT0-C50 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeSIMM
package instructionSIMM, SSIM72
Contacts72
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-XSMA-N72
memory density134217728 bit
Memory IC TypeEDO DRAM MODULE
memory width32
Number of functions1
Number of ports1
Number of terminals72
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX32
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeSIMM
Encapsulate equivalent codeSSIM72
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply5 V
Certification statusNot Qualified
refresh cycle4096
Maximum standby current0.002 A
Maximum slew rate0.24 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationSINGLE
DRAM MODULE
M53230404CY0/CT0-C
4Byte 4Mx32 SIMM
(4Mx16 base)
Revision 0.0
June 1999

M53230404CT0-C50 Related Products

M53230404CT0-C50 M53230404CT0-C60 M53230404CY0-C60 M53230404CY0-C50
Description EDO DRAM Module, 4MX32, 50ns, CMOS, SIMM-72 EDO DRAM Module, 4MX32, 60ns, CMOS, SIMM-72 EDO DRAM Module, 4MX32, 60ns, CMOS, SIMM-72 EDO DRAM Module, 4MX32, 50ns, CMOS, SIMM-72
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code SIMM SIMM SIMM SIMM
package instruction SIMM, SSIM72 SIMM, SSIM72 SIMM, SSIM72 SIMM, SSIM72
Contacts 72 72 72 72
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
Maximum access time 50 ns 60 ns 60 ns 50 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-XSMA-N72 R-XSMA-N72 R-XSMA-N72 R-XSMA-N72
memory density 134217728 bit 134217728 bit 134217728 bit 134217728 bit
Memory IC Type EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE
memory width 32 32 32 32
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 72 72 72 72
word count 4194304 words 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000 4000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 4MX32 4MX32 4MX32 4MX32
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code SIMM SIMM SIMM SIMM
Encapsulate equivalent code SSIM72 SSIM72 SSIM72 SSIM72
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096
Maximum standby current 0.002 A 0.002 A 0.002 A 0.002 A
Maximum slew rate 0.24 mA 0.22 mA 0.22 mA 0.24 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location SINGLE SINGLE SINGLE SINGLE
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