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BBY52-05W

Description
Variable Capacitance Diode, 1.85pF C(T), 7V, Silicon, Hyperabrupt, VSO05561, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size72KB,3 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BBY52-05W Overview

Variable Capacitance Diode, 1.85pF C(T), 7V, Silicon, Hyperabrupt, VSO05561, 3 PIN

BBY52-05W Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH Q
Minimum breakdown voltage7 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance22.22%
Minimum diode capacitance ratio1.1
Nominal diode capacitance1.85 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage7 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationHYPERABRUPT
BBY 52-05W
Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
3
2
1
C1/C2
3
VSO05561
1
A1
2
A2
EHA07179
Type
BBY 52-05W
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Marking
S2s
1=A1
Pin Configuration
2=A2
3=C1/C2
Package
SOT-323
Symbol
V
R
I
F
T
op
T
stg
Value
7
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
Operating temperature range
Storage temperature
1
May-20-1999

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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