SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
High Power Density Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MAJOR RATINGS AND CHARACTERISTICS
V
WM
P
PPM
I
FSM
(Unidirectional only)
T
j
max.
5.0 V to 40 V
500 W
40 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional devices use C or CA suffix
(e.g. SMA5J40CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1,2)
(see Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
only
(2)
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
500
see next table
40
- 55 to + 150
UNIT
W
A
A
°C
Document Number 88875
05-Sep-06
www.vishay.com
1
SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
MARKING
CODE
UNI
SMA5J24
SMA5J24A
SMA5J26
SMA5J26A
SMA5J28
SMA5J28A
SMA5J30
SMA5J30A
SMA5J33
SMA5J33A
SMA5J36
SMA5J36A
SMA5J40
SMA5J40A
Note:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMA5J5.0CA, the maximum V
(BR)
is 7.25 V
(6) V
F
= 3.5 V at I
F
= 25 A (uni-directional only)
5BY
5BZ
5CD
5CE
5CF
5CG
5CH
5CK
5CL
5CM
5CN
5CP
5CQ
5CR
BI
5BY
5BZ
5CD
5CE
5CF
5CG
5CH
5CK
5CL
5CM
5CN
5CP
5CQ
5CR
BREAKDOWN
VOLTAGE
V
(BR)
(V)
(1)
MIN
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
MAX
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
24
24
26
26
28
28
30
30
33
33
36
36
40
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM
(A)
(2)
11.6
12.9
10.7
11.9
10.0
11.0
9.3
10.3
8.5
9.4
7.8
8.6
7.0
7.8
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
DEVICE TYPE
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to ambient
Thermal resistance, junction to leads
Note:
(1) Mounted on minimum recommended pad layout
(1)
SYMBOL
R
θJA
R
θJL
VALUE
80
25
UNIT
°C/W
°C/W
ORDERING INFORMATION
PREFERRED P/N
SMA5J5.0A-E3/61
SMA5J5.0A-E3/5A
UNIT WEIGHT (g)
0.064
0.064
PREFERRED PACKAGE CODE
61
5A
BASE QUANTITY
1800
7500
DELIVERY MODE
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
Document Number 88875
05-Sep-06
www.vishay.com
3
SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
10000
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
Uni-Directional
Bi-Directional
Measured at
Zero Bias
1000
T
j
= 25 °C
f = 1.0 MHz
P
PPM
, Peak Pulse Power (kW)
1
C
J
, Junction Capacitance (pF)
100
Measured at Stand-off
Voltage V
WM
0.1
0.1
µs
10
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
1
10
100
200
td - Pulse
Width
(s)
V
WM
- Reverse Stand-off
Voltage
(V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
50
Transient Thermal Impedance (°C/W)
10
25
0
0
25
50
75
100
125
150
175
200
1
0.01
0.1
1
10
100
1000
T
J
- Initial Temperature (°C)
tp - Pulse Duration (s)
Figure 2. Pulse Power or Current versus Initial Junction Temperature
Figure 5. Typical Transient Thermal Impedance
150
200
I
PPM
- Peak Pulse Current, % I
RSM
100
Peak
Value
I
PPM
Peak Forward Surge Current (A)
tr = 10
µsec
T
j
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50 % of I
PPM
T
j
= T
j
max.
8.3
ms Single Half Sine-Wave
100
Half
Value
- I
PP
2
I
PPM
50
10/1000
µsec Waveform
as defined
by
R.E.A.
50
td
0
0
1.0
2.0
3.0
4.0
10
1
5
10
50
100
t - Time (ms)
Number
of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
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Document Number 88875
05-Sep-06
Embedded System
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