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BAL99-C

Description
Rectifier Diode, 1 Element, 0.1A, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size116KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

BAL99-C Overview

Rectifier Diode, 1 Element, 0.1A, Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

BAL99-C Parametric

Parameter NameAttribute value
MakerSECOS
package instructionHALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.225 W
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
BAL99
Elektronische Bauelemente
Plastic-Encapsulated Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
1
A
3
L
3
Top View
2
C B
1
2
K
E
D
MARKING
MarkingCode
BAL99
JF
REF.
A
B
C
D
E
F
F
G
H
J
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
3
1、 N.C
2、 Cathode
3、 Anode
1
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Junction & Storage Temperature
SYMBOL
V
RM
V
R
I
O
P
D
R
θJA
T
J
,T
STG
VALUE
70
70
100
225
556
150, -55~150
UNIT
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Reverse Breakdown Voltage
SYMBOL
V
(BR)R
V
F1
V
F2
V
F3
V
F4
I
R
C
D
t
RR
MIN.
70
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
MAX.
-
0.715
0.855
1
1.25
2.5
1.5
6
UNIT
V
TEST CONDITION
I
R
= 100µA
I
F
= 1mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 70V
V
R
= 0 V, f = 1MHz
I
F
= I
R
= 10mA, I
rr
=0.1 x I
R
R
L
=100Ω
Forward Voltage
V
Reverse Voltage Leakage Current
Diode Capacitance
Reverse Recovery Time
µA
pF
nS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
03-Nov-2010 Rev. A
Page 1 of 2
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