D2020UKG4 datasheet, PDF - EEWORLD Datasheet

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D2020UKG4: DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SO-8; CategoryDiscrete semiconductor The transistor; File Size20KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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D2020UKG4 Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SO-8

D2020UKG4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	SO-8
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-MDSO-G8
JESD-609 code	e4
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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TetraFET

D2020UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

A

N

8

D

1

2

C

B

P

7

6

5

3

4

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 28V – 1GHz

SINGLE ENDED

FEATURES

H

K

L

J

E

F

G

M

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

PIN 5 – SOURCE

PIN 6 – GATE

PIN 7 – GATE

PIN 8 – SOURCE

SO8 PACKAGE

PIN 1 – SOURCE

PIN 2 – DRAIN

PIN 3 – DRAIN

PIN 4 – SOURCE

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

P

mm

4.06

5.08

1.27

0.51

3.56

4.06

1.65

0.76

0.51

1.02

45°

0°

7°

0.20

2.18

4.57

Tol.

±0.08

+0.25

-0.00

Min.

Max.

Min.

Max.

±0.08

Max.

±0.08

Inches

0.160

0.200

0.050

0.020

0.140

0.160

0.065

0.030

0.020

0.040

45°

0°

7°

0.008

0.086

0.180

Tol.

±0.003

+0.010

-0.000

Min.

Max.

Min.

Max.

±0.003

Max.

±0.003

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

P

D

BV

DSS

BV

GSS

I

D(sat)

T

stg

T

j

Semelab plc.

Power Dissipation

Drain – Source Breakdown Voltage *

Gate – Source Breakdown Voltage*

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

30W

65V

±20V

2A

–65 to 150°C

200°C

Prelim. 9/95

D2020UKG4 Related Products

	D2020UKG4	D2020UK
Description	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SO-8	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SO-8
Is it Rohs certified?	conform to	conform to
Maker	TT Electronics plc	TT Electronics plc
package instruction	SO-8	SO-8
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-MDSO-G8	R-MDSO-G8
JESD-609 code	e4	e4
Number of components	1	1
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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