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DTC114TCA

Description
NPN Small Signal Transistor
CategoryDiscrete semiconductor    The transistor   
File Size190KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

DTC114TCA Overview

NPN Small Signal Transistor

DTC114TCA Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instruction,
Reach Compliance Codeunknow
DTC114 TM/TE/TUA/TCA/TSA
NPN Small Signal Transistor
Small Signal Product
Features
Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
The bias resistors consist of thin -film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
Only the on/off conditions need to be set for
operation,marking device design easy.
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
Equivalent Circuit
Ordering Information (example)
Part No.
DTC114 TM
Package
SOT-723
Packing
8K / 7" Reel
Packing code
RM
Packing code
(Green)
RMG
Manufacture code
M0
Marking
04
Note : Detail please see "Ordering Information(detail, example)" below
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction and Storage Temperature Range
Symbol
PD
V
CBO
V
CEO
V
EBO
I
C
TJ, T
STG
Value
TM
100
TE
150
EUA / ECA
200
50
50
5
100
-55 to + 150
ESA
300
Units
mW
V
V
V
mA
°C
Notes: 1. Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC Current Gain
Collector-emitter saturation voltage
Transition frequency
Imput resistor
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R
1
Min
50
50
5
Typ
Max
Condtion
Ic=50μA,I
E
=0
Ic=1mA,IB=0
I
E
=50μA,I
C
=0
Unit
V
V
V
μA
μA
V
MHz
KΩ
0.5
0.5
100
250
7
10
13
300
600
0.3
V
CB
=50V,I
E
=0
V
EB
=4V,IC=0
V
CE
=5V,I
C
=1mA
I
C
=10mA,I
B
=1mA
V
CE
=10V,I
E
=-5mA, f=100MHz
Version : B13

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