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K6F8008V2M-FF55

Description
Standard SRAM, 1MX8, 55ns, CMOS, PBGA48, 8 X 12 MM, 0.75 MM PITCH, FBGA-48
Categorystorage    storage   
File Size200KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K6F8008V2M-FF55 Overview

Standard SRAM, 1MX8, 55ns, CMOS, PBGA48, 8 X 12 MM, 0.75 MM PITCH, FBGA-48

K6F8008V2M-FF55 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeBGA
package instructionTFBGA,
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time55 ns
JESD-30 codeR-PBGA-B48
length12 mm
memory density8388608 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width8 mm
K6F8008V2M Family
Document Title
1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
1.0
Initial draft
Finalize
- Adopt new code.
- Improve V
IN
, V
OUT
max. on ABSOLUTE MAXIMUM RATINGS’from
3.6V to V
CC
+0.5V.
- Improve V
OH
on DC AND OPERATING CHARACTERISTICS’from
2.2 to 2.4V.
Revise
- Change for tWHZ: 25 to 20ns for 70ns product
- Change for tDW: 20 to 25ns for 55ns product
25 to 30ns for 70ns product
Draft Date
August 25, 1999
February 24, 2000
Remark
Preliminary
Final
2.0
April 26, 2000
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
April 2000

K6F8008V2M-FF55 Related Products

K6F8008V2M-FF55 K6F8008V2M-RF70 K6F8008V2M-RF55 K6F8008V2M-TF55 K6F8008V2M-TF70 K6F8008V2M-FF70
Description Standard SRAM, 1MX8, 55ns, CMOS, PBGA48, 8 X 12 MM, 0.75 MM PITCH, FBGA-48 Standard SRAM, 1MX8, 70ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44 Standard SRAM, 1MX8, 55ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44 Standard SRAM, 1MX8, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Standard SRAM, 1MX8, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Standard SRAM, 1MX8, 70ns, CMOS, PBGA48, 8 X 12 MM, 0.75 MM PITCH, FBGA-48
Parts packaging code BGA TSOP2 TSOP2 TSOP2 TSOP2 BGA
package instruction TFBGA, TSOP2-R, TSOP2-R, TSOP2, TSOP2, TFBGA,
Contacts 48 44 44 44 44 48
Reach Compliance Code unknown compliant compliant compliant compliant unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 55 ns 70 ns 55 ns 55 ns 70 ns 70 ns
JESD-30 code R-PBGA-B48 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PBGA-B48
length 12 mm 18.41 mm 18.41 mm 18.41 mm 18.41 mm 12 mm
memory density 8388608 bit 8388608 bit 8388608 bit 8388608 bit 8388608 bit 8388608 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of terminals 48 44 44 44 44 48
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
organize 1MX8 1MX8 1MX8 1MX8 1MX8 1MX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TSOP2-R TSOP2-R TSOP2 TSOP2 TFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form BALL GULL WING GULL WING GULL WING GULL WING BALL
Terminal pitch 0.75 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.75 mm
Terminal location BOTTOM DUAL DUAL DUAL DUAL BOTTOM
width 8 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 8 mm
Maker SAMSUNG SAMSUNG SAMSUNG - SAMSUNG SAMSUNG
Is it Rohs certified? - incompatible incompatible incompatible incompatible -
Peak Reflow Temperature (Celsius) - 240 240 240 240 -
Maximum time at peak reflow temperature - 30 30 30 30 -
Base Number Matches - 1 1 1 1 -
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