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BYG21MHF4G

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size181KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

BYG21MHF4G Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

BYG21MHF4G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMA, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, SNUBBER DIODE
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current1 µA
Maximum reverse recovery time0.12 µs
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
BYG21M
Taiwan Semiconductor
CREAT BY ART
1.5A, 1000V Fast avalanche Surface Mount Rectifier
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TYPICAL APPLICATION
The superior avalanche capability of BYG21M is specially
suited for free-wheeling, clamping, snubber,
demagnetization in power supplies and other power switching applications.
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level (MSL): level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
64 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage I
F
=1A
(Note 1)
I
F
=1.5A
T
J
=25°C
Maximum reverse current @ Rated V
R
T
J
=100°C
T
J
=125°C
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ) T
A
=25°C, I
(BR)R
=1.23A
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V
Version: A1601
E
RSM
t
rr
C
J
R
θJL
R
θJA
T
J
T
STG
I
R
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
BYG21M
1000
700
1000
1.5
50
1.5
1.6
1
10
50
30
120
13
20
70
- 55 to +150
- 55 to +150
mJ
ns
pF
°C/W
°C
°C
μA
UNIT
V
V
V
A
A
V

BYG21MHF4G Related Products

BYG21MHF4G BYG21M R3G BYG21M M2G BYG21MHM2G BYG21MHF3G
Description Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN DIODE AVALANCHE 1KV 1.5A DO214AC DIODE AVALANCHE 1.5A DO214AC DIODE AVALANCHE 1.5A DO214AC Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
Diode type RECTIFIER DIODE avalanche avalanche RECTIFIER DIODE RECTIFIER DIODE
package instruction SMA, 2 PIN - - R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant - - compliant compliant
ECCN code EAR99 - - EAR99 EAR99
Other features FREE WHEELING DIODE, SNUBBER DIODE - - FREE WHEELING DIODE, SNUBBER DIODE FREE WHEELING DIODE, SNUBBER DIODE
application EFFICIENCY - - EFFICIENCY EFFICIENCY
Configuration SINGLE - - SINGLE SINGLE
Diode component materials SILICON - - SILICON SILICON
Maximum forward voltage (VF) 1.6 V - - 1.6 V 1.6 V
JEDEC-95 code DO-214AC - - DO-214AC DO-214AC
JESD-30 code R-PDSO-C2 - - R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current 50 A - - 50 A 50 A
Number of components 1 - - 1 1
Phase 1 - - 1 1
Number of terminals 2 - - 2 2
Maximum operating temperature 150 °C - - 150 °C 150 °C
Minimum operating temperature -55 °C - - -55 °C -55 °C
Maximum output current 1.5 A - - 1.5 A 1.5 A
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE
Guideline AEC-Q101 - - AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 1000 V - - 1000 V 1000 V
Maximum reverse current 1 µA - - 1 µA 1 µA
Maximum reverse recovery time 0.12 µs - - 0.12 µs 0.12 µs
surface mount YES - - YES YES
technology AVALANCHE - - AVALANCHE AVALANCHE
Terminal form C BEND - - C BEND C BEND
Terminal location DUAL - - DUAL DUAL
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