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DTA114-EUA

Description
PNP Digital Transistor
File Size112KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DTA114-EUA Overview

PNP Digital Transistor

DTA114 EM/EE/EUA/ECA/ESA
PNP Digital Transistor
Small Signal Diode
Features
Built-in
bias resistors enable the configuration of
an inverter circuit without connecting external input
resistor (see equivalent circuit).
TheThe
bias resistors consist of thin -film
resistors with complete isolation to allow negative
biasing of the input.They also have the advantage
of almost completel yeliminating parasitic effects.
Only
the on/off conditions need to be set for
operation,marking device design easy.
Green compound (Halogen free) with suffix "G"
on packing code and prefix "G" on date code.
3
SOT-723/SOT-523
SOT-323/SOT-23
1.IN
2.GND
Ordering Information
Package
SOT-723
SOT-523
SOT-323
SOT-23
TO-92S
Part No.
DTA114 EM
DTA114 EE
Packing
8K / 7" Reel
3K / 7" Reel
Marking
14
14
14
14
1
2
3.OUT
TO-92S
1.GND
2.OUT
1
23
3.IN
DTA114 EUA 3K / 7" Reel
DTA114 ECA 3K / 7" Reel
DTA114 ESA 3K / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Value
EUA
ECA
200
-50
-40½10
-50
-100
-55 to + 150
Type Number
Power Dissipation
Supply Voltage
Input Voltage
Output Current
PeakCollectoCurrent
Junction and Storage Temperature Range
Symbol
PD
V
CC
V
IN
I
O
I
C(MAX)
TJ, T
STG
EM
100
EE
150
ESA
300
Units
mW
V
V
mA
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
V
I(on)
V
I(off)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
30
7
0.8
10
1
250
13
1.2
V
O
=-10V,I
O
=-5mA,f=100MHz
MHz
Min
-0.5
-0.3
-0.88
-0.5
Typ
Max
-3
Condtion
V
CC
=-5V,I
O
=-100μA
V
O
=-0.3V,I
O
=-10mA
I
O
/I
I
=-10mA/-5mA
V
I
=-5V
V
CC
=-50V,V
I
=0
V
O
=-5V,I
O
=-5mA
KΩ
Unit
V
V
mA
μA
Version:B12

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