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UF4016GP

Description
Rectifier Diode, 1 Element, 1A, 1600V V(RRM), Silicon, DO-41, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size349KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

UF4016GP Overview

Rectifier Diode, 1 Element, 1A, 1600V V(RRM), Silicon, DO-41, DO-41, 2 PIN

UF4016GP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeDO-41
package instructionDO-41, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-XALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum output current1 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1600 V
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MCC
Features
  omponents
20736 Marilla Street Chatsworth

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UF4014GP
THRU
UF4016GP
1 Amp Glass
Passivated Ultra Fast
Recovery Rectifier
1400 to 1600 Volts
DO-41
Low Cost
Low Leakage
Low Forward Voltage Drop
High Current Capability
Fast Switching Speed For High Efficiency
Glass Passivated Junction
Maximum Ratings
Operating Junction Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
MST
Catalog
Number
UF4014GP
UF4016GP
Device
Marking
Maximum
Reccurrent
Peak Reverse
Voltage
1400V
1600V
Maximum
RMS
Voltage
980V
1120V
Maximum
DC
Blocking
Voltage
1400V
1400V
D
---
---
A
Cathode
Mark
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
I
F(AV)
I
FSM
1.0 A
30A
T
A
= 55°C
8.3ms, half sine
I
FM
= 1.0A;
T
A
= 25°C
D
C
V
F
2.5V
DIMENSIONS
I
R
10µA
100µA
T
A
= 25°C
T
A
= 100°C
DIM
A
B
C
D
INCHES
MIN
.166
.080
.028
1.000
MAX
.205
.107
.034
---
MM
MIN
4.10
2.00
.70
25.40
MAX
5.20
2.70
.90
---
NOTE
T
rr
100ns
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Typical Junction
C
J
15pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
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