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UMX6602A

Description
Pin Diode, 200V V(BR),
CategoryDiscrete semiconductor    diode   
File Size319KB,10 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

UMX6602A Overview

Pin Diode, 200V V(BR),

UMX6602A Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage200 V
Nominal diode capacitance0.4 pF
Maximum diode forward resistance2.5 Ω
Diode resistance test current100 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
Minority carrier nominal lifetime1 µs
Number of components1
Maximum operating temperature175 °C
Reverse test voltage100 V
surface mountYES
UM6000 / UM6200/UM6600
POWER PIN DIODES
DESCRIPTION
These series of PIN diodes are designed for
applications requiring small package size
and moderate average power handling
capability. The low capacitance of the
UM6000 and UM6600 allows them to be
used as series switching elements to 1 GHz.
The low resistance of the UM6200 is useful
in applications where forward bias current
must be minimized.
Because of its thick I-region width and long
lifetime the UM6000 and UM6600 have
been used in distortion sensitive and high
peak power applications, including receiver
protectors, TACN, and IFF equipment.
Their low capacitance allows them to be
useful as attenuator diodes at frequencies
greater than 1 GHz. The UM6200 has been
used successfully in switches in which low
insertion loss at low bias current is required.
The “A” style package for this series is the
smallest Microsemi PIN diode package. It has
been used successfully in many microwave
applications using coaxial, microstrip, and
stripline techniques at frequencies beyond X-
Band. The “B” and “E” style leaded packages
offer the highest available power dissipation for a
package this small. They have been used
extensively as series switch elements in
microstrip circuits. The “C” style package
duplicates the physical outline available in
conventional ceramic-metal packages but
incorporates the many reliability advantages of
the Microsemi construction.
KEY FEATURES
WWW .
Microsemi
.C
OM
Voltage ratings to 1000V
Average power dissipation to 6 W
Series resistance as low as 0.4
Carrier lifetime greater than 1.0 µs
Non cavity design
Thermally matched configuration
Low capacitance at 0 V bias
Low conductance at 0 V bias
Compatible with automatic insertion
equipment
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
Condition
UM6000/UM6600
PD
A & C
25
O
C Pin Temperature
6W
θ
25
O
C/W
PD
UM6200
θ
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX6001B, etc.
4 W 37.5
o
C/W
2.0 W 75
o
C/W
0.5 W
3.0 W 42.5
o
C/W
10 kW
B & E
½ in. total length to 25
O
C Contact 2.5 W
60
O
C/W
Free Air
0.5 W
O
SM
25 C End Cap Temperature
4.5 W
27.5
O
C/W
All
1 us pulse (Single)
UM6000 25 kW
UM6600 13 kW
UM6000/UM62000/UM6600
UM6000/UM62000/UM6600
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100
200
400
800
1000
UM6001
UM6002
-
UM6006
UM6010
UM6201
UM6202
UM6204
-
-
UM6601
UM6602
-
UM6606
UM6610
Copyright
2005
Rev. 0, 2006-03-13
Microsemi
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