BU522AA datasheet, PDF - EEWORLD Datasheet

BU522AA: DescriptionPower Bipolar Transistor, 7A I(C), 425V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size157KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BU522AA Overview

Power Bipolar Transistor, 7A I(C), 425V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Parameter Name	Attribute value
Maker	Motorola ( NXP )
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	7 A
Collector-emitter maximum voltage	425 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	250
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	75 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	7.5 MHz

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