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BU522B16A

Description
7A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size157KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BU522B16A Overview

7A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB

BU522B16A Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-emitter maximum voltage450 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)250
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment75 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)7.5 MHz
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