Preliminary Technical Information
Power MOSFET TrenchHV
TM
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
IXFH160N15T
V
DSS
I
D25
R
DS(on)
= 150V
= 160A
≤
9.6mΩ
Ω
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dV/dt
P
d
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Transient
T
C
= 25°C
Lead Current Limit, RMS
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
T
C
= 25°C
Maximum
150
150
± 30
160
75
430
5
1
10
830
-55 ... +175
175
-55 ... +175
Ratings
V
V
V
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
TO-247 (IXFH)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
300
260
1.13 / 10
6
Features
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175
°C
Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
= ± 20V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 150°C
Characteristic Values
Min. Typ.
Max.
150
2.5
5.0
V
V
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Uninterruptible power supplies
High speed power switching
applications
± 200 nA
5
μA
250
μA
8.0
9.6
mΩ
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
© 2008 IXYS CORPORATION, All rights reserved
DS99965(01/08)
IXFH160N15T
Symbol
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
Test Conditions
V
DS
= 10V, I
D
= 60A, Note 1
V
GS
= 0V, V
DS
= 25V, f = 1 MHz
Characteristic Values
Min.
65
Typ.
105
8800
1170
150
21
21
52
29
160
43
46
0.25
Max.
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.18 °C/W
°C/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
TO-247AD Outline
(T
J
= 25°C unless otherwise specified)
1
2
3
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
• I
D25
R
G
= 2Ω (External)
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 25A
Dim.
Source-Drain Diode
(T
J
= 25°C, unless otherwise specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 80A, -di/dt = 200A/μs
V
R
= 75V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
160
430
1.2
90
12
0.55
160
A
A
V
μs
A
μC
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
ÆP 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes: 1.
Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH160N15T
Fig. 1. Output Characteristics
@ 25ºC
160
140
120
V
GS
= 10V
9V
8V
350
300
250
V
GS
= 10V
9V
8V
Fig. 2. Extended Output Characteristics
@ 25ºC
7V
I
D
- Amperes
I
D
- Amperes
100
80
60
40
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
6V
200
150
100
7V
6V
5V
50
0
5V
1.4
1.6
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
160
140
120
V
GS
= 10V
8V
7V
3.2
Fig. 4. R
DS(on)
Normalized to I
D
= 80A Value
vs. Junction Temperature
V
GS
= 10V
2.8
I
D
- Amperes
100
80
60
40
20
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
6V
R
DS(on)
- Normalized
2.4
2.0
1.6
1.2
0.8
0.4
I
D
= 160A
I
D
= 80A
5V
2.8
3.2
3.6
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 80A Value
vs. Drain Current
4.0
V
GS
= 10V
3.5
70
90
80
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
R
DS(on)
- Normalized
3.0
2.5
2.0
1.5
1.0
0.5
0
40
80
120
160
200
T
J
= 175ºC
I
D
- Amperes
T
J
= 25ºC
60
50
40
30
20
10
0
240
280
320
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFH160N15T
Fig. 8. Transconductance
180
T
J
= - 40ºC
180
160
140
160
140
Fig. 7. Input Admittance
200
g
f s
- Siemens
I
D
- Amperes
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
T
J
= 150ºC
25ºC
- 40ºC
25ºC
150ºC
0
20
40
60
80
100
120
140
160
180
200
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
10
9
250
8
7
V
DS
= 75V
I
D
= 25A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
V
GS
- Volts
T
J
= 150ºC
T
J
= 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
6
5
4
3
2
1
150
100
50
0
0
0
20
40
60
80
100
120
140
160
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1.00
Fig. 12. Maximum Transient Thermal
Impedance
f
= 1 MHz
Capacitance - PicoFarads
Ciss
Coss
1,000
Z
(th)JC
- ºC / W
30
35
40
10,000
0.10
0.01
Crss
100
0
5
10
15
20
25
0.00
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH160N15T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
24
R
G
= 2Ω
22
V
GS
= 15V
V
DS
= 75V
22
20
18
16
14
12
10
25
35
45
55
65
75
85
95
105
115
125
40
45
50
55
60
65
70
75
80
T
J
= 125ºC
R
G
= 2Ω
V
GS
= 15V
V
DS
= 75V
T
J
= 25ºC
24
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
18
16
14
I
12
10
D
I
D
= 40A
= 80A
T
J
- Degrees Centigrade
t
r
- Nanoseconds
20
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
42
38
34
27
40
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
110
t
r
V
DS
= 75V
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
26
36
t
f
R
G
= 2Ω,
V
DS
= 75V
t
d(off)
- - - -
V
GS
= 15V
100
t
d ( o n )
- Nanoseconds
25
I
D
= 80A, 40A
24
23
22
21
20
19
t
d ( o f f )
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
32
90
30
26
22
18
14
10
2
3
28
I
D
= 40A
80
24
I
D
= 80A
70
20
60
16
25
35
45
55
65
75
85
95
105
115
4
5
6
7
8
9
10
50
125
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
40
110
110
100
100
90
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
260
t
f
36
T
J
= 25ºC
V
DS
= 75V
t
d(off)
- - - -
t
f
V
DS
= 75V
t
d(off)
- - - -
240
220
R
G
= 2Ω, V
GS
= 15V
T
J
= 125ºC, V
GS
= 15V
t
d ( o f f )
- Nanoseconds
t
d ( o f f )
- Nanoseconds
t
f
- Nanoseconds
32
90
t
f
- Nanoseconds
80
70
60
50
40
30
20
I
D
= 40A
200
180
I
D
28
T
J
= 125ºC
80
= 80A
160
140
120
100
80
60
24
T
J
= 25ºC
70
20
T
J
= 125ºC
16
40
45
50
55
60
65
70
75
80
60
50
10
2
3
4
5
6
7
8
9
10
I
D
- Amperes
R
G
- Ohms
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_160N15T(8W)06-07-07
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