AT-38086-TR1 datasheet, PDF - EEWORLD Datasheet

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AT-38086-TR1: DescriptionUHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size137KB，10 Pages; ManufacturerAVAGO; Websitehttp://www.avagotech.com/

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AT-38086-TR1 Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

AT-38086-TR1 Parametric

Parameter Name	Attribute value
Maker	AVAGO
package instruction	DISK BUTTON, O-PRDB-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Collector-emitter maximum voltage	9.5 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-PRDB-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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4.8 V NPN Silicon Bipolar

Common Emitter Transistor

Technical Data

AT-38086

Features

• 4.8 Volt Pulsed

(pulse width = 577

µsec,

duty cycle = 12.5%)/CW

Operation

• +28 dBm Pulsed P

out

@ 900 MHz, Typ.

• +23.5 dBm CW P

out

@ 836.5 MHz, Typ.

• 60% Pulsed Collector

Efficiency @ 900 MHz, Typ.

• 11 dB Pulsed Power Gain

@ 900 MHz, Typ.

• -35 dBc IMD

@ P

out

17 dBm per tone, 900 MHz,

Typ.

85 mil Plastic Surface

Mount Package

Outline 86

Description

Hewlett Packard’s AT-38086 is a

low cost, NPN silicon bipolar

junction transistor housed in a

surface mount plastic package.

This device is designed for use as

a pre-driver or driver device in

applications for cellular and

wireless communications

markets. At 4.8 volts, the

AT-38086 features +28 dBm pulsed

output power, Class AB operation,

and +23.5 dBm CW. Superior

efficiency and gain makes the

AT-38086 an excellent choice for

battery powered systems.

The AT-38086 is fabricated with

Hewlett Packard’s 10 GHz F

Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

Pin Configuration

EMITTER

BASE

EMITTER

COLLECTOR

Applications

• Driver Amplifier for GSM

and AMPS/ETACS/ 900 MHz

NMT Cellular Phones

• 900 MHz ISM and Special

Mobile Radio

AT-38086-TR1 Related Products

	AT-38086-TR1	AT-38086-BLK
Description	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
package instruction	DISK BUTTON, O-PRDB-G4	DISK BUTTON, O-PRDB-G4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Collector-emitter maximum voltage	9.5 V	9.5 V
Configuration	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-PRDB-G4	O-PRDB-G4
Number of components	1	1
Number of terminals	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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