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LVPXA271FC0312

Description
Microprocessor, 32-Bit, 312MHz, CMOS, PBGA336, 14 X 14 MM, 1.55 MM HEIGHT, 0.65 MM PITCH, CSP-336
CategoryThe embedded processor and controller    Microcontrollers and processors   
File Size1MB,138 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Environmental Compliance
Download Datasheet Parametric View All

LVPXA271FC0312 Overview

Microprocessor, 32-Bit, 312MHz, CMOS, PBGA336, 14 X 14 MM, 1.55 MM HEIGHT, 0.65 MM PITCH, CSP-336

LVPXA271FC0312 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIntel
Parts packaging codeBGA
package instructionLFBGA, BGA336,20X20,25
Contacts336
Reach Compliance Codecompliant
ECCN code3A001.A.3
Address bus width26
bit size32
boundary scanNO
maximum clock frequency104 MHz
External data bus width32
FormatFIXED POINT
Integrated cacheNO
JESD-30 codeS-PBGA-B336
length14 mm
low power modeYES
Number of terminals336
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA336,20X20,25
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.25,3 V
Certification statusNot Qualified
Maximum seat height1.55 mm
speed312 MHz
Maximum supply voltage1.9 V
Minimum supply voltage1.7 V
Nominal supply voltage1.8 V
surface mountYES
technologyCMOS
Terminal formBALL
Terminal pitch0.65 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
uPs/uCs/peripheral integrated circuit typeMICROPROCESSOR
Intel
PXA27x Processor Family
Memory Subsystem
Datasheet
Product Features
Device Architecture
— Flash die density: 128-, 256-Mbit
— LPSDRAM die density: 256-Mbit
— Flash + LPDRAM Combo (x16)
— Flash + Flash Combo (x32)
Device Voltage
— Core: V
CC
= 1.8 V (Typ)
— I/O: V
CCQ
= 1.8 V (Typ)
Device Packaging
— Ball count: 336 balls
— Area: 14x14 mm
— Height: 1.55 mm
SDRAM Architecture and Performance
— Clock rate: 104 MHz
— Four internal banks
— Burst Length: 1, 2, 4, 8, or full page
Quality and Reliability
— Extended Temp:
25
°C
to +85
°C
— Minimum 100 K flash block erase cycle
— 0.13
µm
ETOX VIII flash technology
Flash Architecture
— Read-While-Write or Erase
— Asymmetrical blocking structure
— 8-Mbit partition sizes (128-Mbit die)
— 16-Mbit partition sizes (256-Mbit die)
— 16-KWord parameter blocks (Bottom)
— 64-KWord main blocks
— 2-Kbit One-Time Programmable (OTP)
Protection Register
— Zero-latency block locking
— Absolute write protection with block lock
down using F-VPP and F-WP#
Flash Performance
— 85 ns initial access
— 25 ns async page-mode read
— 14 ns sync read (t
CHQV
)
— 52 MHz CLK
— Buffered Enhanced Factory Programming
(Buffered EFP): 5 µs/Byte (Typ)
— Buffered programming at 7 µs/Byte (Typ)
Flash Software
— Intel
FDI, Intel
PSM, and Intel
VFM
— Common Flash Interface (CFI)
— Basic/Extended Command Set
The Intel
®
PXA27x Processor Family Memory Subsystem is a stacked device combining high-
performance Intel StrataFlash
®
memory die with or without low-power SDRAM die in Intel
®
Stacked package. The flash memory features 1.8 V low-power operations with flexible multi-
partitions, dual operation Read-While-Write or Read-While-Erase, asynchronous and synchronous
reads up to 52 MHz on 0.13 µm ETOX™ VIII flash technology. The LPSDRAM memory features
1.8 V low-power operation up to 104 MHz. The PXA27x processor memory subsystem is stacked
on top of Intel
®
PXA27x Processor for an optimized small form-factor package solution for
cellular and PDA applications.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
301855-001
July 2004
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