CSHD3-40TRLEADFREE datasheet, PDF

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CSHD3-40TRLEADFREE: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DPAK-3; CategoryDiscrete semiconductor diode; File Size493KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CSHD3-40TRLEADFREE Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DPAK-3

CSHD3-40TRLEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Central Semiconductor
Parts packaging code	TO-252
package instruction	DPAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	75 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40 V
surface mount	YES
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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CSHD3-40

SURFACE MOUNT SILICON

SCHOTTKY RECTIFIER

3.0 AMP, 40 VOLT

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSHD3-40 is a

high quality, highly reliable silicon Schottky rectifier

designed for use in all types of commercial, industrial,

entertainment, computer and automotive applications.

MARKING: FULL PART NUMBER

DPAK CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

SYMBOL

Peak Repetitive Reverse Voltage

VRRM

Average Rectified Forward Current (TC=120°C)

IO

Peak Forward Surge Current, tp=10ms

Peak Repetitive Reverse Surge Current, tp=2.0μs

Critical Rate of Rise of Reverse Voltage

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

IR

VF

IFSM

IRRM

dv/dt

TJ, Tstg

Θ

JC

40

3.0

75

1.0

10,000

-65 to +150

5.5

UNITS

V

A

V/μs

°C

°C/W

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MAX

VR=40V

100

VR=40V, TC=125°C

10

IF=3.0A

IF=3.0A, TC=125°C

0.65

0.60

UNITS

μA

mA

V

R9 (21-January 2013)

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