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SS39-T3

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 90V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size41KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

SS39-T3 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 90V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

SS39-T3 Parametric

Parameter NameAttribute value
MakerWon-Top Electronics Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage90 V
Maximum reverse current500 µA
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
®
SS32 – SS310
3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
WON-TOP ELECTRONICS
Pb
Features
Low Forward Voltage
Epitaxial Construction with Oxide Passivation
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 100A Peak
A
Low Power Loss
Fast Switching
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
B
D
F
C
H
E
G
Mechanical Data
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
SMB/DO-214AA
Dim
Min
Max
A
B
C
D
E
F
G
H
3.30
4.06
1.91
0.152
5.08
2.13
0.051
0.76
3.94
4.70
2.11
0.305
5.59
2.44
0.203
1.27
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 3.0A
@T
J
= 25°C
@T
J
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
J
R
θJA
R
θJC
T
J
T
STG
SS32
SS33
SS34
SS35
SS36
SS38
SS39 SS310
Unit
20
14
30
21
40
28
50
35
3.0
100
60
42
80
56
90
63
100
70
V
V
A
A
0.50
0.75
0.5
20
0.85
V
mA
Typical Junction Capacitance (Note 2)
Thermal Resistance, Junction to Ambient (Note 1)
Thermal Resistance, Junction to Case (Note 1)
Operating Temperature Range
Storage Temperature Range
250
180
75
20
140
pF
°C/W
-55 to +125
-55 to +150
-55 to +150
°C
°C
Note: 1. Mounted on FR-4 PCB with 8.0 x 8.0mm copper pads.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
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