IS42S16160A1-6TL datasheet, PDF

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IS42S16160A1-6TL: DescriptionSynchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54; Categorystorage storage; File Size924KB，49 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS42S16160A1-6TL Overview

Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54

IS42S16160A1-6TL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e3
length	22.22 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	54
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.16 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	10.16 mm

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IS42S83200A1

(4-bank x 8,388,608 - word x 8-bit)

IS42S16160A1

(4-bank x 4,194,304 - word x 16-bit)

ISSI

October 2005

256 Mb Synchronous DRAM

DESCRIPTION

IS42S83200A1 is a synchronous

256Mb

SDRAM and is

organized as 4-bank x 8,388,608-word x 8-bit; and

IS42S16160A1 is organized as 4-bank x 4,194,304-word x

16-bit.

All inputs and outputs are referenced to the rising

edge of CLK.

IS42S83200A1

and

IS42S16160A1

achieve very

high speed clock rates

up to 166MHz,

and are

suitable for main memories or

graphic

memories in computer systems.

FEATURES

ITEM

tCLK

Clock Cycle Time

(Min.)

CL=2

CL=3

IS42S83200A1/16160A1

-6

CL=2

CL=3

-7

5.4

-75

7.5

5.4

67.5

110

Unit

tRAS Active to Precharge Command Period (Min.)

(Min.)

tRCD Row to Column Delay

tAC

tRC

Icc1

Icc6

Access Time from CLK

Ref /Active Command Period

Operation Current (Single Bank)

Self Refresh Current

(Max.)

(Min.)

(Max.)

IS42S83200A1

IS42S16160A1

130

(Max.) -6,-7,-75

- Single 3.3V ±0.3V power supply

- Max. Clock frequency:

-6:166MHz<3-3-3>

-7:143MHz<3-3-3>

-75:133MHz<3-3-3>

- Fully synchronous operation referenced to clock rising edge

- 4-bank operation controlled by BA0,BA1(Bank Address)

- /CAS latency- 2/3 (programmable)

- Burst length- 1/2/4/8/FP (programmable)

- Burst type- Sequential and interleave burst (programmable)

- Byte Control- DQML and DQMU (IS42S16160A1)

- Random column access

- Auto precharge / All bank precharge controlled by A10

- Auto and self refresh

- 8192 refresh cycles /64ms(4 banks concurrent refresh)

- LVTTL Interface

- Row address A0-12 /Column address A0-9(x8) / A0-8(x16)

- Package:

400-mil, 54-pin Thin Small Outline (TSOP II) with 0.8mm lead pitch

Lead-free available

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

10/28/05

IS42S16160A1-6TL Related Products

	IS42S16160A1-6TL	IS42S16160A1-7T	IS42S16160A1-6T	IS42S83200A1-75T
Description	Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54	Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Parts packaging code	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32
Contacts	54	54	54	54
Reach Compliance Code	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5 ns	5.4 ns	5 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz	143 MHz	166 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
JESD-609 code	e3	e0	e0	e0
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bi
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	8
Humidity sensitivity level	3	3	3	3
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	54	54	54	54
word count	16777216 words	16777216 words	16777216 words	33554432 words
character code	16000000	16000000	16000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	16MX16	16MX16	16MX16	32MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.16 mA	0.16 mA	0.16 mA	0.16 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Matte Tin (Sn) - annealed	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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