X20C16TM-35 datasheet, PDF - EEWORLD Datasheet

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X20C16TM-35: DescriptionNon-Volatile SRAM, 2KX8, 35ns, CMOS, PDSO32, TSOP-32; Categorystorage storage; File Size87KB，20 Pages; ManufacturerXicor Inc.

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X20C16TM-35 Overview

Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDSO32, TSOP-32

X20C16TM-35 Parametric

Parameter Name	Attribute value
Maker	Xicor Inc.
package instruction	TSOP-32
Reach Compliance Code	unknown
Maximum access time	35 ns
Other features	DATA RETENTION 100 YEARS MINIMUM
JESD-30 code	R-PDSO-G32
length	12.4 mm
memory density	16384 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	8 mm

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PPLICATION

OTE

A V A I L A B L E

X20C16

16K

AN56

X20C16

High Speed AUTOSTORE™ NOVRAM

2K x 8 Bit

FEATURES

DESCRIPTION

The Xicor X20C16 is a 2K x 8 NOVRAM featuring a high-

speed static RAM overlaid bit-for-bit with a nonvolatile

electrically erasable PROM (E

PROM) and the

AUTOSTORE feature which automatically saves the

RAM contents to E

PROM at power-down. The X20C16

is fabricated with advanced CMOS floating gate technol-

ogy to achieve high speed with low power and wide

power-supply margin. The X20C16 features a compat-

ible JEDEC approved pinout for byte-wide memories,

for industry standard RAMs, ROMs, EPROMs, and

PROMs.

The NOVRAM design allows data to be easily trans-

ferred from RAM to E

PROM (store) and E

PROM to

RAM (recall). The store operation is completed in 5ms or

less and the recall operation is completed in 10µs or

less. An automatic array recall operation reloads the

contents of the E

PROM into RAM upon power-up.

Xicor NOVRAMS are designed for unlimited write

operations to RAM, either from the host or recalls from

PROM, and a minimum 1,000,000 store operations to

the E

PROM. Data retention is specified to be greater

than 100 years.

•

Fast Access Time: 35ns, 45ns, 55ns

High Reliability

— Endurance: 1,000,000 Nonvolatile Store

Operations

— Retention: 100 Years Minimum

AUTOSTORE™ NOVRAM

— Automatically Stores RAM Data Into the

PROM Array When V

Low Threshold is

Detected

—User Enabled Option

— Open Drain AUTOSTORE Status Output Pin

Power-on Recall

— E

PROM Data Automatically Recalled Into

RAM Upon Power-up

Software Data Protection

— Locks Out Inadvertent Store Operations

Low Power CMOS

— Standby: 250µA

Infinite E

PROM Array Recall, and RAM Read

and Write Cycles

PIN CONFIGURATION

PLASTIC

CERDIP

I/O0

I/O1

I/O2

VSS

X20C16 21

VCC

A10

I/O7

I/O6

I/O5

I/O4

I/O3

VCC

3826 FHD F15.1

TSOP

N/C

I/O

LCC

PLCC

VCC

SOIC

X20C16

A10

I/O7

I/O6

I/O5

I/O4

I/O3

VSS

I/O2

I/O1

I/O0

3826 FHD F03

X20C16

1 32 31 30

A10

I/O7

I/O6

I/O0

X20C16

(TOP VIEW)

3826 FHD F02

3826 ILL F17.2

14 15 16 17 18 19 20

I/O1

I/O2

I/O3

I/O4

VSS

I/O5

AUTOSTORE™ NOVRAM is a trademark of Xicor, Inc.

3826-2.9 2/24/99 T4/C0/D0 SH

Characteristics subject to change without notice

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