December 2007
HYS72T64400EFD–3S–B2
HYS72T128420EFD–[25F/2.5]B2
HYS72T256420EFD–[25F/2.5]B2
240-Pin Fully-Buffered DDR2 SDRAM Modules
DDR2 SDRAM
RoHS Compliant Products
Internet Data Sheet
Rev.1.00
Internet Data Sheet
HYS72T[64/128/256]4[0/2]0EFD–[25F/3S]–B2
Fully-Buffered DDR2 SDRAM Modules
Revision History: Rev.1.00, 2007-12-12
All
Page 20
Page 21
All
Adapted Internet Version
Added
Table 14 “I
CC
/I
DD
Specification for PC2-6400F” on Page 20.
Added
Table 15 “I
CC
/I
DD
Specification for PC2-5300F” on Page 21
Editorial changes.
Previous Revision: Rev. 0.61, 2006-12-12
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
techdoc@qimonda.com
qag_techdoc_rev411 / 3.31 QAG / 2007-01-22
06132007-KAU4-NN52
2
Internet Data Sheet
HYS72T[64/128/256]4[0/2]0EFD–[25F/3S]–B2
Fully-Buffered DDR2 SDRAM Modules
1
1.1
Overview
Features
• Detects errors on the channel and reports them to the host
memory controller.
• Automatic DDR2 DRAM Bus Calibration.
• Automatic Channel Calibration.
• Full Host Control of the DDR2 DRAMs.
• Over-Temperature Detection and Alert.
• Hot Add-on and Hot Remove Capability.
• MBIST and IBIST Test Functions.
• Transparent Mode for DRAM Test Support.
• Low profile: 133.35mm x 30.35 mm
• 240 Pin gold plated card connector with 1.00mm contact
centers (JEDEC standard pending).
• Based on JEDEC standard reference card designs (Jedec
standard pending).
• SPD (Serial Presence Detect) with 256 Byte serial
E
2
PROM.Performance:
• RoHS Compliant Products
1)
This chapter describes the main characteristics of the 240-Pin Fully-Buffered DDR2 SDRAM Modules product family.
• 240-pin Fully-Buffered ECC Dual-In-Line DDR2 SDRAM
Module for PC, Workstation and Server main memory
applications.
• One rank 64M
×
72 and , two rank 128M
×
72, 256M
×
72
module organization, and 64M
×
8, 128M
×
4 chip
organization.
• Standard Double-Data-Rate-Two Synchronous DRAMs
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power
supply.
• 2GB, 1GB, 512MB Modules built with chipsize packages
PG-TFBGA-60.
• Re-drive and re-sync of all address, command, clock and
data signals using AMB (Advanced Memory Buffer).
• High-Speed Differential Point-to-Point Link Interface at 1.5
V (Jedec standard pending).
• Host Interface and AMB component industry standard
compliant.
• Supports SMBus protocol interface for access to the AMB
configuration registers.
TABLE 1
Performance Table
QAG Speed Code
DRAM Speed Grade
Module Speed Grade
CAS-RCD-RP latencies
Max. Clock Frequency
CL3
CL5
CL4
Min. RAS-CAS-Delay
Min. Row Precharge Time
–25F
DDR2–800D
PC2–6400D
5–5–5
–3S
DDR2–667D
PC2–5300D
5–5–5
200
333
266
15
15
MHz
MHz
MHz
ns
ns
Unit
f
CK3
f
CK5
f
CK4
t
RCD
t
RP
200
400
266
12.5
12.5
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev.1.00, 2007-12-12
06132007-KAU4-NN52
3
Internet Data Sheet
HYS72T[64/128/256]4[0/2]0EFD–[25F/3S]–B2
Fully-Buffered DDR2 SDRAM Modules
QAG Speed Code
DRAM Speed Grade
Module Speed Grade
CAS-RCD-RP latencies
Min. Row Active Time
Min. Row Cycle Time
–25F
DDR2–800D
PC2–6400D
5–5–5
–3S
DDR2–667D
PC2–5300D
5–5–5
45
60
Unit
t
RAS
t
RC
45
57.5
ns
ns
1.2
Description
controller and / or the adjacent DIMMs on a system board
using an Industry Standard High-Speed Differential Point-to-
Point Link Interface at 1.5 V.
The Advanced Memory Buffer also allows buffering of
memory traffic to support large memory capacities. All
memory control for the DRAM resides in the host, including
memory request initiation, timing, refresh, scrubbing, sparing,
configuration access, and power management. The
Advanced Memory Buffer interface is responsible for handling
channel and memory requests to and from the local DIMM
and for forwarding requests to other DIMMs on the memory
channel. Fully Buffered DIMM provides a high memory
bandwidth, large capacity channel solution that has a narrow
host interface. The maximum memory capacity is 288 DDR2
SDRAM devices per channel or 8 DIMMs.
This document describes the electrical and mechanical
features of a 240-pin,PC2-5300F, ECC type, Fully Buffered
Double-Data-Rate Two Synchronous DRAM Dual In-Line
Memory Modules (DDR2 SDRAM FB-DIMMs). Fully Buffered
DIMMs use commodity DRAMs isolated from the memory
channel behind a buffer on the DIMM. They are intended for
use as main memory when installed in systems such as
servers and workstations. PC2-5300F, refers to the DIMM
naming convention indicating the DDR2 SDRAMs running at
333, MHz clock speed and offering 5300, MB/s peak
bandwidth. FB-DIMM features a novel architecture including
the Advanced Memory Buffer. This single chip component,
located in the center of each DIMM, acts as a repeater and
buffer for all signals and commands which are exchanged
between the host controller and the DDR2 SDRAMs including
data in- and output. The AMB communicates with the host
Rev.1.00, 2007-12-12
06132007-KAU4-NN52
4
Internet Data Sheet
HYS72T[64/128/256]4[0/2]0EFD–[25F/3S]–B2
Fully-Buffered DDR2 SDRAM Modules
TABLE 2
Ordering Information
Product Type
1)
PC2-6400 (5-5-5)
HYS72T128420EFD–25FB2
HYS72T256420EFD–25FB2
PC2-5300 (5-5-5)
HYS72T256420EFD–3S–B2
HYS72T128420EFD–3S–B2
HYS72T64400EFD–3S–B2
2GB 2R×4 PC2–5300F–555–11–H0
1GB 2R×8 PC2–5300F–555–11–B0
512MB 1R×8 PC2–5300F–555–11–A0
2 Ranks, Non-ECC 512Mbit (×4)
2 Ranks, Non-ECC 512Mbit (×8)
1 Rank, Non-ECC
512Mbit (×8)
1GB 2R×8 PC2–6400F–555–11–R0
2GB 2R×4 PC2–6400F–555–11–V0
2 Ranks, Non-ECC 512Mbit (×8)
2 Ranks, Non-ECC 512Mbit (×4)
Compliance Code
2)
Description
SDRAM Technology
1) For detailed information regarding Product Type of Qimonda please see chapter "Product Type Nomenclature" of this datasheet.
2) The Compliance Code is printed on the module label and describes the speed grade, for example "PC2–6400F–555–11–R0" where 6400F
means Fully-Buffered DIMM modules with 6.40 GB/sec Module Bandwidth and "555–11" means Column Address Strobe (CAS) latency
=5, Row Column Delay (RCD) latency = 5 and Row Precharge (RP) latency = 5 using the latest JEDEC SPD Revision 1.1 and produced
on the Raw Card "R".
TABLE 3
Address Format
DIMM
Density
2GB
1GB
512MB
Module
Organization
256M
×
72
128M
×
72
64M
×
72
Memory
Ranks
2
2
1
ECC/
Non-ECC
ECC
ECC
ECC
# of SDRAMs # of row/bank/column
bits
36
18
9
14/2/11
14/2/10
14/2/10
Raw
Card
H, V
B, R
A
TABLE 4
Components on Modules
Product Type
1)2)
HYS72T256420EFD
HYS72T128420EFD
HYS72T64400EFD
DRAM Components
1)
HYB18T512400B2F
HYB18T512800B2F
HYB18T512800B2F
DRAM Density
512Mbit
512Mbit
512Mbit
DRAM Organisation
128M
×
4
64M
×
8
64M
×
8
1) Green Product
2) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet.
Rev.1.00, 2007-12-12
06132007-KAU4-NN52
5
京公网安备 11010802033920号
EEWORLD
