DHG 30 I 600HA
advanced
Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
(Marking on product)
V
RRM
=
I
FAV
=
t
rr
=
600 V
30 A
35 ns
DHG 30 I 600HA
3
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-247AD
●
Industry standard outline
●
Epoxy meets UL 94V-0
●
RoHS compliant
Ratings
Symbol
V
RRM
I
R
V
F
Definition
max. repetitive reverse voltage
reverse current
Conditions
T
VJ
= 25 °C
V
R
= 600 V
V
R
= 600 V
I
F
= 30 A
I
F
= 60 A
I
F
= 30 A
I
F
= 60 A
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
C
= 85 °C
T
VJ
= 150 °C
min.
typ.
max.
600
50
5
2.36
2.20
30
1.31
28.6
0.70
Unit
V
µA
mA
V
V
V
V
A
V
m
Ω
K/W
°C
W
A
A
A
ns
ns
pF
forward voltage
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
I
RM
t
rr
C
J
E
AS
I
AR
average forward current
threshold voltage
slope resistance
rectangular, d = 0.5
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
-55
T
C
= 25 °C
t
p
= 10 ms (50 Hz), sine
I
F
= 30 A;
-di
F
/dt = 600 A/µs
V
R
= 400 V
V
R
= 300 V; f = 1 MHz
I
AS
=
A;
L = 100 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz
T
VJ
= 45 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
12
35
150
180
200
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
tbd
tbd
mJ
A
0614
IXYS reserves the right to change limits, conditions and dimensions.
* Data according to IEC 60747and per diode unless otherwise specified
© 2006 IXYS all rights reserved
DHG 30 I 600HA
advanced
Ratings
Symbol
I
RMS
R
thCH
M
D
F
C
T
stg
Weight
Definition
RMS current
thermal resistance case to heatsink
mounting torque
mounting force with clip
storage temperature
Conditions
per pin*
min.
typ.
max.
70
Unit
A
K/W
0.25
0.8
20
-55
6
1.2
120
150
Nm
N
°C
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-247AD
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
0614
IXYS reserves the right to change limits, conditions and dimensions.
* Data according to IEC 60747and per diode unless otherwise specified
© 2006 IXYS all rights reserved
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