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SPN8910S89TGB

Description
N-Channel Enhancement Mode MOSFET
File Size62KB,5 Pages
ManufacturerSYNC-POWER
Websitehttp://www.syncpower.com/
Download Datasheet Compare View All

SPN8910S89TGB Overview

N-Channel Enhancement Mode MOSFET

SPN8910
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8910 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN8910
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
FEATURES
100V/2A,R
DS(ON)
= 320mΩ@V
GS
= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
SOT-89 package design
APPLICATIONS
High Frequency Small Power Switching
forMB/NB/VGA
Network DC/DC Power System
Load Switch
PIN CONFIGURATION
SOT-89
G
D
S
1
2
3
PART MARKING
SPN8910
AAAAAA
BBBBBB
2010/12/09
Preliminary
Page 1

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