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TSM60NB1R4CHC5G

Description
Power Field-Effect Transistor, 3A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size684KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSM60NB1R4CHC5G Overview

Power Field-Effect Transistor, 3A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

TSM60NB1R4CHC5G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)25 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance1.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)9 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
TSM60NB1R4CH
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 3A, 1.4Ω
FEATURES
● Super-Junction technology
● High performance due to small figure-of-merit
● High ruggedness performance
● High commutation performance
● 100% UIL tested
● Pb-free plating
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
VALUE
600
1.4
7.12
UNIT
V
Ω
nC
APPLICATIONS
● Power Supply
● Lighting
TO-251 (IPAK)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
(Note 3)
(Note 3)
LIMIT
600
±30
3
1.8
9
28.4
25
1.0
- 55 to +150
UNIT
V
V
A
A
A
W
mJ
A
°C
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
4.4
62
UNIT
°C/W
°C/W
Thermal Performance Note:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
1
Version: A1608

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