K4D62323HA-QC50 datasheet, PDF

K4D62323HA-QC50: DescriptionDDR DRAM, 2MX32, 0.75ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100; Categorystorage storage; File Size1MB，47 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4D62323HA-QC50 Overview

DDR DRAM, 2MX32, 0.75ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	QFP
package instruction	TQFP, TQFP100,.7X.9
Contacts	100
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	BLOCK ORIENTED PROTOCOL
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	67108864 bit
Memory IC Type	DDR DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	100
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	2MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TQFP
Encapsulate equivalent code	TQFP100,.7X.9
Package shape	RECTANGULAR
Package form	FLATPACK, THIN PROFILE
power supply	2.5,3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8,FP
Maximum standby current	0.06 A
Maximum slew rate	0.45 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
width	14 mm

K4D62323HA

64M DDR SDRAM

64Mbit DDR SDRAM

512K x 32Bit x 4 Banks

Double Data Rate Synchronous DRAM

with Bi-directional Data Strobe and DLL

Revision 1.0

August 2000

Samsung Electronics reserves the right to change products or specification without notice.

- 1 -

Rev. 1.0 (Aug. 2000)

	K4D62323HA-QC50	K4D62323HA-QC70T
Description	DDR DRAM, 2MX32, 0.75ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100	DDR DRAM, 2MX32, 0.75ns, CMOS, PQFP100
Is it Rohs certified?	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG
package instruction	TQFP, TQFP100,.7X.9	QFP, TQFP100,.7X.9
Reach Compliance Code	compliant	compliant
Maximum access time	0.75 ns	0.75 ns
Maximum clock frequency (fCLK)	200 MHz	143 MHz
I/O type	COMMON	COMMON
interleaved burst length	2,4,8	2,4,8
JESD-30 code	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e0	e0
memory density	67108864 bit	67108864 bit
Memory IC Type	DDR DRAM	DDR DRAM
memory width	32	32
Number of terminals	100	100
word count	2097152 words	2097152 words
character code	2000000	2000000
Maximum operating temperature	65 °C	65 °C
organize	2MX32	2MX32
Output characteristics	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TQFP	QFP
Encapsulate equivalent code	TQFP100,.7X.9	TQFP100,.7X.9
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, THIN PROFILE	FLATPACK
power supply	2.5,3.3 V	2.5,3.3 V
Certification status	Not Qualified	Not Qualified
Continuous burst length	2,4,8,FP	2,4,8,FP
Maximum standby current	0.06 A	0.06 A
Maximum slew rate	0.45 mA	0.37 mA
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.5 mm
Terminal location	QUAD	QUAD

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