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US1JHR2G

Description
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size209KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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US1JHR2G Overview

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

US1JHR2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionSMA, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.075 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
US1A - US1M
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Ultrafast recovery time for high efficiency
- Built-in strain relief
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
R
θJA
T
J
T
STG
50
15
27
75
- 55 to +150
- 55 to +150
1.0
5
150
75
10
US
1A
50
35
50
US
1B
100
70
100
US
1D
200
140
200
US
1G
400
280
400
1
30
1.7
US
1J
600
420
600
US
1K
800
560
800
US
1M
1000
700
1000
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D1411072
Version: M15

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