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BUZ71AC

Description
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size67KB,2 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BUZ71AC Overview

Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

BUZ71AC Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
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