ADVANCE D COM P ON E NTS PACKAG I NG
1 Gigabit Synchronous DRAM
DPSD256MX4XY5
DESCRIPTION:
The Memory Stack™ series is a family of interchangeable memory devices. The 1 Gigabit Syncronous DRAM assembly
utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb
(128M x 4) SDRAMs.
This 1Gb LP-Stack™ has been designed to fit in the
same footprint as the 512Mb (128M x 4) SDRAM
TSOPII monolithic. This stack allows for system upgrade
while providing an alternative low cost memory solution.
FEATURES:
•
•
Electrical characteristics meet semiconductor
manufacturers’ datasheets
Memory organization:
(2) 512Mb memory devices. Each device arranged
as 128M x 4 bits (32M x 4 bits x 4 banks)
Memory stack organization:
256M x 4 bits (64M x 4 bits x 4 banks)
•
•
•
•
•
JEDEC approved, 2 Rank stack pinout and
footprint (with 2 CSs, 1 CKE)
Optimized for RDIMMs
IPC-A-610, class 2, manufacturing standards
Lead free manufacturing process
Package: 54-Pin TSOPII stack
PIN-OUT DIAGRAM
VCC
N.C.
VCCQ
N.C.
DQ0
VSSQ
N.C.
N.C.
VCCQ
N.C.
DQ1
VSSQ
N.C.
VCC
CS1
WE
CAS
RAS
CS0
BA0
BA1
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
N.C.
VSSQ
N.C.
DQ3
VCCQ
N.C.
N.C.
VSSQ
N.C.
DQ2
VCCQ
N.C.
VSS
N.C.
DQM
CLK
CKE
A12/N.C.*
A11
A9
A8
A7
A6
A5
A4
VSS
•
(TOP VIEW)
* N.C. on 4K Refresh Stacks.
A0-A12
BA0, BA1
DQ0-DQ3
CAS
RAS
WE
DQM
CKE
CLK
CS0, CS1
V
CC
/V
SS
V
CCQ
/V
SSQ
NC
PIN NAMES
Row Address:
Column Address:
Data In/Data Out
A0-A12
A0-A9, A11, A12
FUNCTIONAL BLOCK DIAGRAM
CS1
CS0
RAS
CAS
WE
CLK
DQM
CKE
A0-A12
BA0,BA1
(32M x 4bit x 4 bank)
Column Address Strobe
Row Address Strobe
Data Write Enable
Data Input/Output Mask
Clock Enable
System Clock
Chip Selects
Power Supply/Ground
Data Output Power/Ground
No Connect
512 Mb SDRAM
(32M x 4 bit x 4 bank)
Bank Select Address
DQ0-DQ3
30A215-10
REV. C 6/03
This document contains information on a product that is currently released to production at DPAC Technologies.
DPAC reserves the right to change products or specifications herein without prior notice.
1
1 Gigabit Synchronous DRAM
DPSD256MX4XY5
ORDERING INFORMATION
DP
PREFIX
SD 256M
TYPE
MEMORY
DEPTH
X
DESIG
4
MEMORY
WIDTH
X
DESIG
Y5
PACKAGE
- DP
SUPPLIER
XX
X
XXX
MFR ID MEMORY CYCLE
REVISION TIME
P12
P13
12
10
08
75
75P2
70
70P2
60
55
BLANK
n
PC100 / CL2
PC100 / CL3
12ns (83MHz)
10ns (100MHz)
8ns (125MHz)
7.5ns (133MHz) CL3
7.5ns (133MHz) CL2
7ns (143MHz) CL3
7ns (133MHz) CL2
6ns (166MHz) CL2
5.5ns (183MHz) CL3
REVISION NOT SPECIFIED
PER MANUFACTURER DIE REVISION
MANUFACTURER CODE *
SUPPLIER CODE*
STACKABLE TSOP
512 MEGABIT LVTTL BASED
MEMORY MODULE WITHOUT SUPPORT LOGIC
SYNCHRONOUS DRAM
* Contact your sales representative for supplier and manufacturer codes.
NOTE:
1. AC Parameters of base memory are unchanged from device manufacturers’ specifications.
2. DC Parameters may be affected by stacking. Please refer to application note 53A004-00 for further information.
3. For assembly and inspection procedures, refer to application note 53A001-00.
4. Maximum reflow temperature recommendation is 215°C.
MECHANICAL DIAGRAM
PIN 1
INDEX
TOP VIEW
SIDE VIEW
BOTTOM VIEW
.020 [.51]
TYP.
.891 MAX.
[22.63 MAX.]
.0315 [.80]
TYP.
.102 MAX. [2.59 MAX]
END VIEW
END VIEW DETAIL
.502±.008
[12.75±.20]
COPLANARITY:
.004 [.10] from seating plane
Inch [mm]
.463 [11.76] TYP
Lead Toe-to-Toe per device datasheet
30A215-10
REV. C 6/03
DPAC Technologies
Products & Services for the Integration Age
7321 Lincoln Way, Garden Grove, CA 92841
Tel
714 898 0007
Fax
714 897 1772
www.dpactech.com Nasdaq: DPAC
©2003 DPAC Technologies, all rights reserved. DPAC Technologies™, DuraStack™, Memory Stack™, LP-Stack™, CS-Stack™ are trademarks of DPAC Technologies Corp.
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