DPS1124-100M datasheet, PDF - EEWORLD Datasheet

DPS1124-100M: DescriptionSRAM Module, 64KX16, 100ns, CMOS; Categorystorage storage; File Size76KB，2 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPS1124-100M Overview

SRAM Module, 64KX16, 100ns, CMOS

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	B&B Electronics Manufacturing Company
package instruction	DIP, DIP56,1.5
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	100 ns
Spare memory width	8
I/O type	COMMON
JESD-30 code	R-XDMA-T56
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	56
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX16
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP56,1.5
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Minimum standby current	2 V
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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