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FJT1100T50A

Description
30V, SILICON, SIGNAL DIODE, DO-7
CategoryDiscrete semiconductor    diode   
File Size22KB,1 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Stay tuned Parametric

FJT1100T50A Overview

30V, SILICON, SIGNAL DIODE, DO-7

FJT1100T50A Parametric

Parameter NameAttribute value
MakerTexas Instruments
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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