T
ANCERAM
®
C
HIP
C
APACITORS
TANCERAM
®
chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because Tanceram
®
capacitors exhibit
extremely low ESR, equivalent circuit performance can often
be achieved using considerably lower capacitance values.
Low DC leakage reduces current drain, extending the battery
life of portable products. Tancerams
®
high DC breakdown
voltage ratings offer improved reliability and eliminate large
voltage de-rating common when designing with tantalums.
A
DVANTAGES
•
•
•
•
Low ESR
Higher Surge Voltage
Reduced CHIP Size
Higher Insulation Resistance
•
•
•
•
Low DC Leakage
Non-polarized Devices
Improved Reliability
Higher Ripple Current
A
PPLICATIONS
• Switching Power Supply Smoothing (Input/Output)
• DC/DC Converter Smoothing (Input/Output)
• Backlighting Inverters
• General Digital Circuits
Typical ESR Comparison
10
100%
Typical Breakdown Voltage Comparison
1.0
µF
/ 16V
Tantalum
75%
1.0
µF
/ 16V Tantalum
% Distribution
ESR (Ohms)
1
50%
1.0
µF
/ 16V TANCERAM
0.1
®
1.0
µF
/ 16V TANCERAM
®
25%
0.01
0.001
0%
0.01
0.1
1
10
100
0
100
200
300
400
500
Frequency (MHz)
DC Breakdown Voltage
H
OW TO
O
RDER
TANCERAM
®
250
VOLTAGE
500 = 50 V
250 = 25 V
160 = 16 V
100 = 10 V
6R3 = 6.3 V
R18
CASE SIZE
See Chart
Y
DIELECTRIC
W = X7R
X = X5R
Y = Y5V
105
CAPACITANCE
1st two digits are
significant; third digit
denotes number of
zeros.
474 = 0.47 µF
105 = 1.00 µF
Z
TOLERANCE
Y5V
Z = +80% -20%
X7R/X5R
K = ±10%
M = ±20%
V
TERMINATION
V = Ni barrier w/
100% Sn Plating
MARKING
4 = Unmarked
4
E
TAPE MODIFIER
Code Type Reel
E
Plastic 7”
T
Paper
7”
Tape specifications
conform to EIA RS481
P/N written: 250R18Y105ZV4E
14
www.johanson dielectrics.com
T
ANCERAM
®
C
HIP
C
APACITORS
C
APACITANCE
S
ELECTION
.047
pF
0.10
µF
0.22
µF
0.33
µF
0.47
µF
1.0
µF
2.2
µF
3.3
µF
4.7
µF
10 µ
F
22 µ
F
47 µ
F
100
µF
15
C
ASE
S
IZE
0402
R07
0603
R14
0805
R15
1206
R18
1210
S41
1812
S43
L
W
T
E/B
Inches
.040 ±.004
.020 ±.004
.025 Max.
.008 ±.004
Inches
.063 ±.008
.032 ±.008
.035 Max.
.010±.005
Inches
.080 ±.010
.050 ±.010
.060 Max.
.020±.010
(mm)
(1.02 ±.10)
(0.51 ±.10)
(0.64)
(0.20±.10)
(mm)
(1.60 ±.20)
(0.81 ±.20)
(0.89)
(.25±.13)
(mm)
(2.03 ±.25)
(1.27 ±.25)
(1.52)
(0.51±.25 )
L
W
T
E/B
L
W
T
E/B
L
W
T
E/B
Inches
(mm)
.125 ±.010
(3.17 ±.25)
.062 ±.010
(1.57 ±.25)
.070 Max.
(1.78)
.020 +.015-0.10 (0.51+.38-.25)
Inches
(mm)
(3.18 ±.25)
L .125 ±.010
(2.41 ±.25)
W .095 ±.010
.110 Max.
(2.8)
T
E/B .020 +.015-0.10 (0.51+.38-.25)
Inches
.175 ±.010
.125 ±.010
.110 Max.
.035±.020
(mm)
(4.45 ±.25)
(3.17 ±.25)
(2.8)
(0.89±.51)
L
W
T
E/B
* Tmax = .140 In (3.55mm)
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
DIELECTRIC
X7R
X5R
Y5V
W
L
T
E/B
Contact factory for C/V requirements which are not shown.
E
LECTRICAL
C
HARACTERISTICS
X7R
X7R
Temperature Coefficient
Dissipation Factor
Insulation Resistance
(Min. @ 25°C, WVDC)
Test Conditions
For other dielectric specifications see page 20
±15% (-55 to +125°C)
3.5% max
500
ΩF
or 10 GΩ,
whichever is less
X5R
X5R
±15% (-55 to +85°C)
For
≥
10 Volts:
5.0% max
For 6.3 Volts: 10.0% max
500
ΩF
or 10 GΩ,
whichever is less
Y5V
+22%, -82% (-30 to +85°C)
For
≥
16 Volts:
7.0% max
For 10 Volts: 9.0% max
For 6.3 Volts: 16.0% max
500
ΩF
or 10 GΩ
whichever is less
For capacitance values >10µF: 120Hz ± 10Hz @ 0.5V ± 0.1Vrms
www.johanson dielectrics.com
E
LECTRICAL
C
HARACTERISTICS
PARAMETER
TEMPERATURE
COEFFICIENT:
0± 30 ppm/°C
20%
0%
NPO
-55 to +125°C
± 15%
20%
0%
X7R
-55 to +125°C
± 15%
20%
0%
X5R
-55 to +85°C
-20%
-20%
-20%
-40%
-40%
-40%
-60%
-60%
-60%
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
DISSIPATION FACTOR:
.001 (0.1%) max
For Vrated
≥
50 VDC, DF = 2.5% max
For Vrated = 125 VDC, DF = 3.0% max
For Vrated = 116 VDC, DF = 3.5% max
None
For Vrated = 25 VDC, DF = 3.0% max
For Vrated = 16 VDC: DF = 3.5% max
For Vrated = 10 VDC: DF = 5.0% max
IR @ 25°C, WVDC = 1000ΩF or
100GΩ whichever is less
2
DWV = 2.5 X WVDC,
25°C, 50mA max.
AGING:
INSULATION RESISTANCE:
DIELECTRIC STRENGTH:
2.5% / decade hour
IR @ 25°C, WVDC = 1000ΩF or 100GΩ whichever is less
1
IR @ 125°C, WVDC = 10% of 25°C rating
For Vrated = 6 - 200 VDC, DWV = 2.5 X WVDC, 25°C, 50mA max.
For Vrated = 201 - 499 VDC, DWV = 2.0 X WVDC, 25°C, 50mA max.
For Vrated = 500 - 999 VDC, DWV = 1.5 X WVDC, 25°C, 50mA max.
For Vrated = 1000+ VDC, DWV = 1.2 X WVDC, 25°C, 50mA max.
C > 100 pF; 1kHz ±50Hz;1.0±0.2 VRMS
C
≤
100 pF 1Mhz ±50kHz; 1.0±0.2 VRMS
1kHz ±50Hz;1.0±0.2 VRMS
1) Tanceram X7R IR = 500
ΩF
or 10 GΩ,
TEST PARAMETERS:
NOTES:
1kHz ±50Hz;1.0±0.2 VRMS
2) Tanceram X5R IR = 500
ΩF
or 10 GΩ
PARAMETER
TEMPERATURE COEFFICIENT:
+22% -56%
20%
0%
Z5U
+10 to +85°C
+22% -82%
20%
0%
X7R
-30 to +85°C
-20%
-20%
-40%
-40%
-60%
-60%
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
DISSIPATION FACTOR:
For Vrated
≥
25 VDC, DF = 4.0 % max
For Vrated = 16 VDC, DF = 5.0 % max
5.0 % / decade hour
For Vrated = 25 VDC, DF = 5.0% max
For Vrated = 16 VDC, DF = 7.0% max
For Vrated = 10 VDC, DF = 9.0% max
7.0% / decade hour
AGING:
INSULATION RESISTANCE:
DIELECTRIC STRENGTH:
TEST PARAMETERS:
NOTES:
IR @ 25°C, WVDC = 100ΩF or 10GΩ whichever is less
DWV = 2.5 X WVDC, 25°C, 50mA max.
1kHz ±50Hz; 0.5±0.2 VRMS
1kHz ±50Hz;1.0±0.2 VRMS
20
www.johanson dielectrics.com
Microcontroller MCU
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