LM4040D datasheet, PDF - EEWORLD Datasheet

LM4040, LM4041

Precision Micro-Power

Shunt Voltage References

Description

LM4040 and LM4041 are precision two−terminal shunt mode

voltage references offered in factory programmed reverse breakdown

voltages of 1.225 V, 2.500 V, 3.000 V, 3.300 V, 4.096 V, and 5.000 V.

ON Semiconductor’s Charge Programmable floating gate

technology ensures precise voltage settings offering five grades of

initial accuracy; from 0.1% to 2%.

LM4040 and LM4041 operate over a shunt current range of 60

mA

to 15 mA with low dynamic impedance, and 100 ppm/°C temperature

coefficient ensuring stable reverse breakdown voltage accuracy over a

wide range of operating conditions.

These shunt regulators do not require an external stabilizing

capacitor but are stable with any capacitive load (up to 1

mF).

Offered in space saving SOT−23 and SC−70 packages LM4040 and

LM4041 are specified for operation over the full industrial

temperature range of

−40°C

to +85°C.

Features

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SOT−23 3 Lead

TB SUFFIX

CASE 527AG

SC−70 5 Lead

SD SUFFIX

CASE 419AC

MARKING DIAGRAMS

4xYM

G

4xA

G

•

Reverse Breakdown Voltages:

•

♦

1.225 V

♦

3.300 V

♦

2.500 V

♦

4.096 V

♦

3.000 V

♦

5.000 V

Accuracy Grades:

♦

A:

±0.1%

♦

D:

±1.0%

♦

B:

±0.2%

♦

E:

±2.0%

♦

C:

±0.5%

Operating Current: 60

mA

to 15 mA

Low Output Noise: 35

mV

(10 Hz to 10 KHz)

Small Package Size: SOT−23, SC−70

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mobile Handheld Devices

Industrial Process Control

Instrumentation

Laptop and Desktop PCs

Automotive

Energy Management

4x

A

Y

M

G

= Specific Device Code

=

(4L = LM4040, 4M = LM4041)

= Assembly Location Code

= Production Year

= Production Month

= Pb−Free Package

PIN CONNECTIONS

1

3

2

(SOT−23)

1

2

3

(SC−70)

4

5

Typical Applications

•

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 11 of this data sheet.

©

Semiconductor Components Industries, LLC, 2013

July, 2013

−

Rev. 4

1

Publication Order Number:

LM4040/D

LM4040, LM4041

R

S

V

IN

LM4040

LM4041

V

R

Figure 1. Test Circuit

Table 1. PIN DESCRIPTIONS

SOT−23

1

2

3

SC−70

3

1

2

4

5

Name

V+

V−

NC

NIC

Positive voltage

Negative voltage

This pin must be left floating or connected to V−.

No Internal Connection. A voltage or signal applied to this pin will have no effect.

Function

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameter

Reverse Current

Forward Current

Junction Temperature

Power Dissipation

SOT−23−3

SC−70−5

Rating

20

10

150

300

240

Unit

mA

°C

mW

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Table 3. RECOMMENDED OPERATING CONDITIONS

Parameter

I

REVERSE

Ambient Temperature Range

Rating

0.06

−

15

−40

to +85

Unit

mA

°C

Table 4. ESD SUSCEPTABILITY

Symbol

ESD

Human Body Model

Machine Model

Parameter

Min

2000

200

Units

V

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2

LM4040, LM4041

Table 5. DC ELECTRICAL CHARACTERISTICS

(I

R

= 100

mA,

T

A

=

−40°C

to +85°C, unless otherwise noted. Typical values are at T

A

= +25°C.)

Limits

Symbol

1.225 V

V

R

Reverse Breakdown Voltage

T

A

= +25°C

LM4041A (0.1%)

LM4041B (0.2%)

LM4041C (0.5%)

LM4041D (1.0%)

LM4041E (2.0%)

V

R

Reverse Breakdown Voltage

Tolerance

LM4041A

LM4041B

LM4041C

LM4041D

LM4041E

I

R_MIN

DV

R

/DT

Minimum Operating Current

Reverse Breakdown Voltage

Temperature Coefficient

I

R

= 10 mA

I

R

= 1 mA

I

R

= 100

mA

DV

R

/DI

R

Reverse Breakdown Voltage

Change with Operating Current

I

R_MIN

≤

I

R

≤

1 mA

≤

I

R

≤

15 mA

Z

R

Reverse Dynamic Impedance

I

R

= 1 mA,

f = 120 Hz,

I

AC

= 0.1 I

R

LM4041A, B, C

LM4041D, E

LM4041A, B, C

LM4041D, E

LM4041A, B

LM4041C

LM4041D, E

e

N

DV

R

V

HYST

2.500 V

V

R

Reverse Breakdown Voltage

T

A

= +25°C

LM4040A (0.1%)

LM4040B (0.2%)

LM4040C (0.5%)

LM4040D (1.0%)

LM4040E (2.0%)

V

R

Reverse Breakdown Voltage

Tolerance

LM4040A

LM4040B

LM4040C

LM4040D

LM4040E

2.498

2.496

2.490

2.475

2.450

2.500

±2

±4

±10

±25

±50

2.502

2.504

2.510

2.525

2.550

±19

±21

±29

±49

±74

mV

V

Wideband Noise

Reverse Breakdown Voltage

Long Term Stability

Thermal Hysteresis (Note 2)

I

R

= 100

mA,

10 Hz

≤

f

≤

10 KHz

T = 1000 h

DT

=

−40°C

to +125°C

LM4041A, B, C

LM4041D, E

1.2238

1.2226

1.219

1.213

1.200

1.225

±1.2

±2.4

±6

±12

±25

45

±20

±15

0.7

2.5

0.5

200

120

0.08

2.0

2.5

8

10

1.5

2.0

mV

RMS

ppm

%

W

mV

±100

±150

1.2262

1.2274

1.231

1.237

1.250

±9.2

±10.4

±14

±24

±36

65

mA

ppm/°C

mV

V

Parameter

Test Conditions

Min

Typ

Max

Units

1. Guaranteed by design.

2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature

−40°C

and the 25°C measure-

ment after cycling to temperature +125°C.

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3

LM4040, LM4041

Table 5. DC ELECTRICAL CHARACTERISTICS

(I

R

= 100

mA,

T

A

=

−40°C

to +85°C, unless otherwise noted. Typical values are at T

A

= +25°C.)

Limits

Symbol

2.500 V

I

R_MIN

DV

R

/DT

Minimum Operating Current

Reverse Breakdown Voltage

Temperature Coefficient

I

R

= 10 mA

I

R

= 1 mA

LM4040A, B, C

LM4040D, E

I

R

= 100

mA

DV

R

/DI

R

Reverse Breakdown Voltage

Change with Operating Current

I

R_MIN

≤

I

R

≤

1 mA

≤

I

R

≤

15 mA

Z

R

Reverse Dynamic Impedance

I

R

= 1 mA,

f = 120 Hz,

I

AC

= 0.1 I

R

LM4040A, B, C

LM4040D, E

LM4040A, B, C

LM4040D, E

LM4040A, B

LM4040C

LM4040D, E

e

N

DV

R

V

HYST

3.000 V

V

R

Reverse Breakdown Voltage

T

A

= +25°C

LM4040A (0.1%)

LM4040B (0.2%)

LM4040C (0.5%)

LM4040D (1.0%)

LM4040E (2.0%)

V

R

Reverse Breakdown Voltage

Tolerance

LM4040A

LM4040B

LM4040C

LM4040D

LM4040E

I

R_MIN

DV

R

/DT

Minimum Operating Current

Reverse Breakdown Voltage

Temperature Coefficient

I

R

= 10 mA

I

R

= 1 mA

I

R

= 100 uA

DV

R

/DI

R

Reverse Breakdown Voltage

Change with Operating Current

I

R_MIN

≤

I

R

≤

1 mA

1mA

≤

I

R

≤

15 mA

LM4040A, B, C

LM4040D, E

LM4040A, B, C

LM4040D, E

LM4040A, B, C

LM4040D, E

2.997

2.994

2.985

2.970

2.940

3.000

±3

±6

±15

±30

±60

45

±20

±15

0.4

2.7

1.1

1.3

9

11

mV

±100

±150

3.003

3.006

3.015

3.030

3.060

±22

±26

±34

±59

±89

65

mA

ppm/°C

mV

V

Wideband Noise

Reverse Breakdown Voltage

Long Term Stability

Thermal Hysteresis (Note 2)

I

R

= 100

mA,

10 Hz

≤

f

≤

10 KHz

T = 1000 h

DT

=

−40°C

to +125°C

45

±20

±15

0.3

2.5

0.3

350

120

0.08

1.0

1.2

8

10

0.8

0.9

1.1

mV

RMS

ppm

%

W

mV

±100

±150

65

mA

ppm/°C

Parameter

Test Conditions

Min

Typ

Max

Units

1. Guaranteed by design.

2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature

−40°C

and the 25°C measure-

ment after cycling to temperature +125°C.

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4

LM4040, LM4041

Table 5. DC ELECTRICAL CHARACTERISTICS

(I

R

= 100

mA,

T

A

=

−40°C

to +85°C, unless otherwise noted. Typical values are at T

A

= +25°C.)

Limits

Symbol

3.000 V

Z

R

Reverse Dynamic Impedance

I

R

= 1 mA,

f = 120 Hz,

I

AC

= 0.1 I

R

LM4040A, B

LM4040C

LM4040D, E

e

N

DV

R

V

HYST

3.300 V

V

R

V

R

V

R

Reverse Breakdown Voltage

T

A

= +25°C

T

A

= +25°C

LM4040A

LM4040B

LM4040C

LM4040D

I

R_MIN

DV

R

/DT

Minimum Operating Current

Reverse Breakdown Voltage

Temperature Coefficient

I

R

= 10 mA

I

R

= 1 mA

I

R

= 100

mA

DV

R

/DI

R

Reverse Breakdown Voltage

Change with Operating Current

I

R_MIN

≤

I

R

≤

1 mA

≤

I

R

≤

15 mA

Z

R

Reverse Dynamic Impedance

I

R

= 1 mA,

f = 120 Hz,

I

AC

= 0.1 I

R

LM4040A, B, C

LM4040D

LM4040A, B, C

LM4040D

LM4040A, B

LM4040C

LM4040D

e

N

DV

R

V

HYST

4.096 V

V

R

Reverse Breakdown Voltage

T

A

= +25°C

LM4040A (0.1%)

LM4040B (0.2%)

LM4040C (0.5%)

LM4040D (1.0%)

4.092

4.088

4.080

4.055

4.096

4.100

4.104

4.120

4.137

V

Wideband Noise

Reverse Breakdown Voltage

Long Term Stability

Thermal Hysteresis (Note 2)

I

R

= 100

mA,

10 Hz

≤

f

≤

10 KHz

T = 1000 h

DT

=

−40°C

to +125°C

LM4040A, B, C

LM4040D

LM4040A (0.1%)

LM4040B (0.2%)

Reverse Breakdown Voltage

LM4040C (0.5%)

LM4040D (1.0%)

Reverse Breakdown Voltage

Tolerance

3.297

3.294

3.285

3.270

3.300

±3

±6

±15

±30

45

±20

±15

0.3

2.5

0.3

350

120

0.08

1.0

1.2

8

10

0.8

0.9

1.1

mV

RMS

ppm

%

W

mV

±100

±150

3.303

3.306

3.315

3.330

±22

±26

±34

±59

65

mA

ppm/°C

mV

V

Wideband Noise

Reverse Breakdown Voltage

Long Term Stability

Thermal Hysteresis (Note 2)

I

R

= 100

mA,

10 Hz

≤

f

≤

10 KHz

T = 1000 h

DT

=

−40°C

to +125°C

0.4

350

120

0.08

0.9

1.2

mV

RMS

ppm

%

W

Parameter

Test Conditions

Min

Typ

Max

Units

1. Guaranteed by design.

2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature

−40°C

and the 25°C measure-

ment after cycling to temperature +125°C.

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5

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