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IXTY50N085T

Description
Power Field-Effect Transistor, 50A I(D), 85V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size172KB,5 Pages
ManufacturerIXYS
Environmental Compliance  
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IXTY50N085T Overview

Power Field-Effect Transistor, 50A I(D), 85V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 2 PIN

IXTY50N085T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)250 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage85 V
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.023 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)130 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Preliminary Technical Information
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP50N085T
IXTY50N085T
V
DSS
I
D25
=
=
R
DS(on)
85
V
50
A
Ω
23 mΩ
TO-220 (IXTP)
D (TAB)
G
D S
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
L
I
DM
I
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C; R
GS
= 1 MΩ
Transient
T
C
= 25°C
Package Current Limit, RMS
TO-252
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/μs, V
DD
V
DSS
T
J
175°C, R
G
= 18
Ω
T
C
= 25°C
Maximum Ratings
85
85
±
20
50
25
130
10
250
3
130
-55 ... +175
175
-55 ... +175
V
V
V
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
TO-252 (IXTY)
G
S
D (TAB)
D = Drain
TAB = Drain
G = Gate
S = Source
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175
°C
Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-252
300
260
1.13 / 10 Nm/lb.in.
3
0.35
g
g
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 25
μA
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 150°C
Characteristic Values
Min. Typ.
Max.
85
2.0
4.0
±
100
1
100
23
V
V
nA
μA
μA
V
GS
= 10 V, I
D
= 0.5 I
D25
, Notes 1, 2
DS99638 (11/06)
© 2006 IXYS CORPORATION All rights reserved
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