BYV27-150AMO datasheet, PDF - EEWORLD Datasheet

BYV27-150AMO: DescriptionRectifier Diode, 1 Element, 1.3A, 150V V(RRM),; CategoryDiscrete semiconductor diode; File Size544KB，13 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BYV27-150AMO Overview

Rectifier Diode, 1 Element, 1.3A, 150V V(RRM),

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-609 code	e0
Maximum non-repetitive peak forward current	50 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	1.3 A
Maximum repetitive peak reverse voltage	150 V
Maximum reverse recovery time	0.025 µs
surface mount	NO
Terminal surface	Tin/Lead (Sn80Pb20)

	BYV27-150AMO	BYV27-200T/R	BYV27-50AMO	BYV27-50T/R	BYV27-400T/R	BYV27-100T/R
Description	Rectifier Diode, 1 Element, 1.3A, 150V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 200V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 50V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 50V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 400V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 100V V(RRM),
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1.1 V	1 V
JESD-609 code	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	1	1	1	1	1	1
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	1.3 A	1.3 A	1.3 A	1.3 A	1.3 A	1.3 A
Maximum repetitive peak reverse voltage	150 V	200 V	50 V	50 V	400 V	100 V
Maximum reverse recovery time	0.025 µs	0.025 µs	0.025 µs	0.025 µs	0.05 µs	0.025 µs
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn80Pb20)
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	-	-	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)

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