5962R102023VXC datasheet, PDF - EEWORLD Datasheet

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5962R102023VXC: DescriptionSRAM Module, 1MX32, CMOS, CQFP132, 0.900 X 0.900 INCH, SIDEBRAZED, CERAMIC, QFP-132; Categorystorage storage; File Size219KB，27 Pages; ManufacturerCobham PLC

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5962R102023VXC Overview

SRAM Module, 1MX32, CMOS, CQFP132, 0.900 X 0.900 INCH, SIDEBRAZED, CERAMIC, QFP-132

5962R102023VXC Parametric

Parameter Name	Attribute value
Maker	Cobham PLC
Parts packaging code	QFP
package instruction	QFP,
Contacts	132
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Other features	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY
JESD-30 code	S-CQFP-G132
JESD-609 code	e4
length	22.86 mm
memory density	33554432 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of terminals	132
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	105 °C
Minimum operating temperature	-55 °C
organize	1MX32
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFP
Package shape	SQUARE
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	7.87 mm
Maximum supply voltage (Vsup)	2 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.85 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	GOLD
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD
total dose	100k Rad(Si) V
width	22.86 mm

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Standard Products

UT8ER1M32 32Megabit SRAM MCM

UT8ER2M32 64Megabit SRAM MCM

UT8ER4M32 128Megabit SRAM MCM

Preliminary

Data Sheet

December 16, 2009

FEATURES

20ns Read, 10ns Write maximum access times available

Functionally compatible with traditional 1M, 2M and 4M

x 32 SRAM devices

CMOS compatible input and output levels, three-state

bidirectional data bus

- I/O Voltages 2.3V to 3.6V, 1.7V to 2.0Vcore

Available densities:

- UT8ER1M32: 33, 554, 432 bits

- UT8ER2M32: 67, 108, 864 bits

- UT8ER4M32: 134, 217, 728 bits

Operational environment:

- Total-dose: 100 krad(Si)

- SEL Immune: 111MeV-cm

/mg

- SEU error rate = 6.0x10

-16

errors/bit-day assuming

geosynchronous orbit, Adam’s 90% worst environment,

and 6600ns default Scrub Rate Period (=97% SRAM

availability)

Packaging option:

- 132-lead ceramic quad flatpack

Standard Microelectronics Drawing:

- UT8ER1M32: 5962-10202

- UT8ER2M32: 5962-10203

- UT8ER4M32: 5962-10204

- QML Q, Q+ and V pending

INTRODUCTION

The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high

performance CMOS static RAM multichip modules (MCMs)

organized as two, four or eight individual 524,288 words x 32

bits respectively. Easy memory expansion is provided by active

LOW chip enables (En), an active LOW output enable (G), and

three-state drivers. This device has a power-down feature that

reduces power consumption by more than 90% when deselected.

Autonomous (master) and demanded (slave) scrubbing

continues while deselected.

Writing to the device is accomplished by driving one of the chip

enable (En) inputs LOW and the write enable (W) input LOW.

Data on the 32 I/O pins (DQ0 through DQ31) is then written into

the location specified on the address pins (A0 through A18).

Reading from the device is accomplished by driving one of the

chip enables (En) and output enable (G) LOW while driving

write enable (W) HIGH. Under these conditions, the contents of

the memory location specified by the address pins will appear

on the I/O pins.

Note:

Only on En pin may be active at any time.

The 32 input/output pins (DQ0 through DQ31) are placed in a

high impedance state when the device is deselected (En HIGH),

the outputs are disabled (G HIGH), or during a write operation

(En LOW, W LOW).

A[18:0]

512Kx32

(Master or Slave)

Die 1

DQ[31:0]

512Kx32

(Slave)

Die 2, 4, or 8

MBE

BUSY/NC

SCRUB

Figure 1. Block Diagram

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