UNISONIC TECHNOLOGIES CO., LTD
7N60
7.4A, 600V N-CHANNEL
POWER MOSFET
1
Power MOSFET
TO-220
DESCRIPTION
The UTC
7N60
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
1
TO-220F
FEATURES
* V
DS
= 600V, I
D
= 7.4A
* R
DS(ON)
= 1.0Ω
@V
GS
= 10 V (7N60/7N60-R)
R
DS(ON)
= 1.2Ω
@V
GS
= 10 V (7N60-F/7N60-M/7N60-Q)
* Ultra Low Gate Charge (Typical 29 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= typical 16pF )
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
1
TO-220F1
1
TO-262
SYMBOL
1
TO-263
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TF1-T
7N60G-TF1-T
7N60L-T2Q-T
7N60G-T2Q-T
7N60L-TQ2-R
7N60G-TQ2-R
7N60L-TQ2-T
7N60G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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1 of 6
QW-R502-076,Ka
7N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
7.4
A
Continuous
I
D
7.4
A
Drain Current
29.6
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
530
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
142
W
Power Dissipation
P
D
TO-220F/TO-220F1
48
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, I
AS
= 7.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤7.4A,
di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-262/TO-263
Junction to Ambient
TO-220F/TO-220F1
TO-220/TO-262/TO-263
Junction to Case
TO-220F/TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
0.88
2.6
UNIT
°C/W
°C/W
°C/W
°C/W
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2 of 6
QW-R502-076,Ka
7N60
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature Coefficient
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
600
1
100
-100
0.67
2.0
4.0
1.0
1.2
1.2
1.2
1.0
1400
180
21
70
170
140
130
29
7
14.5
38
V
μA
nA
nA
V/°C
V
Ω
Ω
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
I
GSS
V
GS
= -30V, V
DS
= 0V
I = 250μA,
△BV
DSS
/△T
J D
Referenced to 25°C
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
7N60
7N60-F
V
GS
= 10V,
7N60-M
I
D
= 3.7A
7N60-Q
7N60-R
Static Drain-Source On-State Resistance
R
DS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
=300V, I
D
=7.4A,
Turn-On Rise Time
t
R
R
G
=25Ω
Turn-Off Delay Time
t
D(OFF)
(Note 1, 2)
Turn-Off Fall Time
t
F
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
=480V, I
D
=7.4A,
V
GS
=10 V
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 7.4 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0V, I
S
= 7.4 A,
Reverse Recovery Time
t
RR
dI
F
/ dt = 100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
16
1.4
7.4
29.6
320
2.4
CLASSIFICATION OF R
DS(ON)
RANK
VALUE
-
1.0Ω
F
1.2Ω
M
1.2Ω
Q
1.2Ω
R
1.0Ω
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3 of 6
QW-R502-076,Ka
7N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-076,Ka
7N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
Power MOSFET
V
DS
V
GS
R
G
V
DD
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
D.U.T.
Switching Test Circuit
Switching Waveforms
12V
0.2µF
50kΩ
0.3µF
Same
Type as
D.U.T.
V
DS
V
GS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-076,Ka
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