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AP75N07AGP-HF

Description
TRANSISTOR POWER, FET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size94KB,4 Pages
ManufacturerAPEC
Environmental Compliance
Download Datasheet Parametric View All

AP75N07AGP-HF Overview

TRANSISTOR POWER, FET, FET General Purpose Power

AP75N07AGP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAPEC
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)450 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (ID)80 A
Maximum drain-source on-resistance0.011 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)320 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
AP75N07AGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Low Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
Halogen Free & RoHS Compliant Product
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
75V
11mΩ
80A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
4
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
75
+30
80
70
320
300
450
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
mJ
Total Power Dissipation
Single Pulse Avalanche Energy
3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.5
62
Units
℃/W
℃/W
1
201306243
Data & specifications subject to change without notice
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