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M464S1724BT1-L75

Description
Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144
Categorystorage    storage   
File Size169KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

M464S1724BT1-L75 Overview

Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144

M464S1724BT1-L75 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeMODULE
package instructionDIMM, DIMM144,32
Contacts144
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N144
memory density1073741824 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals144
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM144,32
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum standby current0.008 A
Maximum slew rate1 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
M464S1724BT1
Revision History
Revision 0 (Oct. 1999)
-PC133 First Published.
PC133 SODIMM
Revision 0.1 (Sep. 2000)
-Typo error corrections at Package dimensions.
Rev. 0.1 Sep. 2000

M464S1724BT1-L75 Related Products

M464S1724BT1-L75 M464S1724BT1-C75
Description Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144
Is it Rohs certified? incompatible incompatible
Maker SAMSUNG SAMSUNG
Parts packaging code MODULE MODULE
package instruction DIMM, DIMM144,32 DIMM, DIMM144,32
Contacts 144 144
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.4 ns 5.4 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 133 MHz
I/O type COMMON COMMON
JESD-30 code R-XDMA-N144 R-XDMA-N144
memory density 1073741824 bit 1073741824 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 64 64
Humidity sensitivity level 1 1
Number of functions 1 1
Number of ports 1 1
Number of terminals 144 144
word count 16777216 words 16777216 words
character code 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 16MX64 16MX64
Output characteristics 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM
Encapsulate equivalent code DIMM144,32 DIMM144,32
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 225 225
power supply 3.3 V 3.3 V
Certification status Not Qualified Not Qualified
refresh cycle 4096 4096
self refresh YES YES
Maximum standby current 0.008 A 0.008 A
Maximum slew rate 1 mA 1 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount NO NO
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD
Terminal pitch 0.8 mm 0.8 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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