DB101S thru DB107S
®
DB101S thru DB107S
Pb Free Plating Product
Pb
1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier
Features
•
Glass passivated chip junction
•
Low forward voltage drop
•
High surge overload rating of 50 A peak
•
Ideal for printed circuit board
DB-S/DF-S
Unit : inch (mm)
.060(1.524)
.004(0.10)
.011(0.28)
.335(8.51)
.316(8.05)
.009(0.25)
.255(6.5)
.245(6.2)
.410(10.4)
.360(9.40)
Mechanical Data
•
Case: Molded plastic, DB-S/DF-S
•
Epoxy: UL 94V-0 rate flame retardant
•
Terminals: Leads solderable per MIL-STD-202,
•
Mounting position: Any
.205(5.2)
.195(5.0)
.045(1.14)
.035(0.89)
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Parameter
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
at T
A
= 25
O
C
at T
A
= 125
O
C
I
R
C
J
R
θ
JA
R
θ
JL
T
J
,T
S
DB101S DB102S DB103S DB104S DB105S DB106S DB107S
DF005S DF01S DF02S DF04S DF06S DF08S DF10S
.089(2.5)
.086(2.2)
method 208 guaranteed
.310(7.9)
.290(7.4)
.040(1.016)
Unit
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
A
= 40
O
C
Peak Forward Surge Current 8.3 ms Single Half-sine-wave
Superimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1 A
Maximum Reverse Current at Rated
DC Blocking Voltage
Typical Junction Capacitance
1)
Typical Thermal Resistance
2)
Typical Thermal Resistance
2)
50
35
50
100
70
100
200
140
200
400
280
400
1
50
1.1
5
500
25
40
15
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
pF
O
C/W
C/W
O
O
Operating and Storage Temperature Range
1)
2)
-55 to +150
C
Measured at 1 MHz and applied reverse voltage of 4 V
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13 X 13
mm) copper pads.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Power technology
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