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BAP50W-03-C

Description
Pin Diode,
CategoryDiscrete semiconductor    diode   
File Size154KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

BAP50W-03-C Overview

Pin Diode,

BAP50W-03-C Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typePIN DIODE
BAP50W-03
Elektronische Bauelemente
Small Signal General Purpose PiN Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Diode Capacitance
Low Diode Forward Resistance
H
D
SOD-323
1
Cathode Band
G
MARKING
2
A81
F
PACKAGE INFORMATION
Package
SOD-323
MPQ
3K
Leader Size
7 inch
C
B
A
E
J
REF.
A
B
C
D
Millimeter
Min.
Max.
1.05 REF.
0.20 REF.
0.80
1.00
0.25
0.40
REF.
E
F
G
H
Millimeter
Min.
Max.
0.080
0.180
1.15
1.45
1.60
1.80
2.30
2.70
MAXIMUM RATINGS
(Single diode @ T
A
= 25°C)
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Power Dissipation (T
A
= 90°
C)
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
Symbol
V
R
I
F
P
D
R
θJA
T
J
, T
STG
Ratings
50
50
200
85
150, -55 ~ +150
Unit
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
Parameters
Continuous Reverse Voltage
Forward Voltage
Reverse Current
Symbol
V
R
V
F
I
R
C
D1A
C
D1B
C
D2
C
D3
r
D
Min.
50
-
-
-
-
-
-
-
-
-
Max.
-
1.1
100
0.91
1.11
0.55
0.35
40
25
5
Unit
V
V
nA
Test Conditions
I
R
=10µA
I
F
=50 mA
V
R
=50 V
V
R
=0, f = 1MHz
V
R
=0, f = 1MHz
V
R
=1 V, f = 1MHz
V
R
=5 V, f = 1MHz
I
F
=0.5 mA, f =100 MHz
I
F
=1 mA, f =100 MHz
I
F
=10 mA, f =100 MHz
Diode Capacitance
pF
Diode Forward Resistance
1
Note:
1. Guaranteed on AQL basis: inspection level S4,AQL 1.0
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Jan-2014 Rev. A
Page 1 of 2

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