Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF3810 Series
350 AMP , 75 Volts, 2.5 mΩ
Avalanche Rated N-channel
TrenchFET
Features:
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (R
DS(ON)
Q
G
) figure of merit
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF3810 ___ ___ ___
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Lead Option
3/
Package
3/ 4/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Q = TO-258 modified
E = MILPACK III
Maximum Ratings
5/
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package
limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Single and Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ For lead bending options / pinout configurations - contact
factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics
o
@25 C.
Symbol
V
DSS
continuous
transient
Value
75
+ 20
+ 30
60
350
150
200
3000
600
-55 to 175
0.5
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
V
GS
I
D1
I
D2
I
D3
I
AR
E
AS
P
D
T
OP
& T
STG
R
θJC
@ T
C
= 25ºC
@ T
C
= 25ºC
@ T
C
= 125ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T
C
= 25ºC
MILPACK III (E)
TO-258 modified (Q)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0051A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF3810 Series
Symbol
V
GS
= 0V, I
D
= 3 mA
V
GS
= 10V, I
D
= 125A, Tj= 25
o
C
V
GS
= 15V, I
D
= 125A, Tj=25
o
C
V
GS
= 10V, I
D
= 125A, Tj= 175
o
C
V
DS
= V
GS
, I
D
= 8.0mA, Tj= 25
o
C
V
DS
= V
GS
, I
D
= 8.0mA, Tj= 125
o
C
V
DS
= V
GS
, I
D
= 8.0mA, Tj= -55
o
C
V
GS
= ±20V, Tj= 25
o
C
V
GS
= ±20V, Tj= 125
o
C
V
DS
= 75V, V
GS
= 0V, T
j
= 25
o
C
V
DS
= 75V, V
GS
= 0V, T
j
= 150
o
C
V
DS
= 10V, I
D
= 60A, T
j
= 25
o
C
V
GS
= 10V
V
DS
= 37.5V
I
D
= 200A
V
GS
= 10V
V
DS
= 37.5V
I
D
= 200A
R
G
= 1.0Ω, pw= 3us
I
F
= 100A, V
GS
= 0V
I
F
= 150A, di/dt = 100A/usec
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
BV
DSS
R
DS(on)
Electrical Characteristics
5/
Drain to Source Breakdown Voltage
Drain to Source On State
Resistance
Gate Threshold Voltage
Min
75
––
––
––
2.5
1.5
––
––
––
––
––
65
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
80
2.5
2
5
3.6
3.0
5
10
30
0.06
150
100
550
180
140
50
40
80
40
0.90
150
7
360
41
4.15
530
Max
––
3
-
––
5.0
––
6
±200
––
25
2000
––
––
––
––
––
––
––
––
1.25
––
––
––
––
––
––
Units
V
mΩ
V
GS(th)
I
GSS
I
DSS
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr1
I
rm1
Q
rr1
C
iss
C
oss
C
rss
V
nA
μA
μA
Mho
nC
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nsec
V
nsec
A
nC
nF
nF
pF
MILPACK III (E)
TO-258 mod (Q)
TOLERANCES: .XXX ± .010
PIN ASSIGNMENT (Standard)
Package
Drain
Source
Gate
Pin 1
Pin 2
Pin 3
TO-258 mod
Pin 1
Pin 2
Pin 3
MILPACK III
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0051A
DOC
Analog electronics
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