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GVT73128S24T-10

Description
Standard SRAM, 128KX24, 10ns, CMOS, PQFP100
Categorystorage    storage   
File Size60KB,14 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric Compare View All

GVT73128S24T-10 Overview

Standard SRAM, 128KX24, 10ns, CMOS, PQFP100

GVT73128S24T-10 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCypress Semiconductor
package instructionTQFP-100
Reach Compliance Codecompliant
Maximum access time10 ns
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density3145728 bit
Memory IC TypeSTANDARD SRAM
memory width24
Number of functions1
Number of terminals100
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX24
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.01 A
Minimum standby current3 V
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
GALVANTECH
, INC.
ASYNCHRONOUS
SRAM
FEATURES
Fast access times: 9, 10, 12 and 15ns
Fast OE# access times: 4, 5, 6 and 7ns
Single +3.3V+0.3V power supply
Fully static -- no clock or timing strobes necessary
All inputs and outputs are TTL-compatible
Three state outputs
Easy memory expansion with CE#, CE1#, CE2 and OE#
options
Automatic chip deselect power down
High-performance, low-power consumption, CMOS,
double-metal process
Low profile 100 pin TQFP and 119 bump, 14mm x 22mm
PBGA (Ball Grid Array) packages
Multiple Ground and VCC pins for maximum noise
immunity
GVT73128A24/GVT73128S24
128K X 24 ASYNCHRONOUS SRAM
128K x 24 SRAM
+3.3V SUPPLY, THREE MEGABIT
THREE CHIP ENABLES
GENERAL DESCRIPTION
The GVT73128A24 and GVT73128S24 are organized as
a 131,072 x 24 SRAM using a four-transistor memory cell
with a high performance, silicon gate, low-power CMOS
process. Galvantech SRAMs are fabricated using triple-layer
polysilicon, double-layer metal technology.
This device offers multiple power and ground pins for
improved performance and noise immunity. For increased
system flexibility and eliminating bus contention problems,
this device offers multiple chip enables (CE#, CE1# and
CE2), and output enable (OE#) with this organization. For
GVT73128S24 device in 100-pin TQFP package, separate
byte enables (BE0#, BE1#, and BE2#) are also available to
control individual bytes.
Writing to the device is accomplished by bringing Chip
Enables (CE# and CE1#) and Write Enable (WE#) inputs
LOW and CE2 HIGH. Reading from the device is
accomplished by bringing Chip Enables (CE# and CE1#)
LOW and bringing CE2 and Write Enable (WE#) inputs
HIGH, along with Output Enable (OE#) being asserted LOW.
The device offers a low power standby mode when chip
is not selected. This allows system designers to meet low
standby power requirements.
OPTIONS
Timing
9ns access
10ns access
12ns access
15ns access
Packages
100-pin TQFP
119-lead BGA
Temperature
Commercial
Industrial
MARKING
-9
-10
-12
-15
T
B
None
I
(
0°C
to
70°C)
(
-40°C
to
85°C)
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688 Fax (408) 566-0699 Web Site www.galvantech.com
Rev. 8/99
Galvantech, Inc. reserves the right to chang e
products or specifications without notice.

GVT73128S24T-10 Related Products

GVT73128S24T-10 GVT73128S24T-15 GVT73128S24T-9 GVT73128S24T-9I GVT73128S24T-10I GVT73128S24T-15I GVT73128S24T-12 GVT73128S24T-12I
Description Standard SRAM, 128KX24, 10ns, CMOS, PQFP100 Standard SRAM, 128KX24, 15ns, CMOS, PQFP100 Standard SRAM, 128KX24, 9ns, CMOS, PQFP100 Standard SRAM, 128KX24, 9ns, CMOS, PQFP100 Standard SRAM, 128KX24, 10ns, CMOS, PQFP100 Standard SRAM, 128KX24, 15ns, CMOS, PQFP100 Standard SRAM, 128KX24, 12ns, CMOS, PQFP100 Standard SRAM, 128KX24, 12ns, CMOS, PQFP100
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor
package instruction TQFP-100 TQFP-100 TQFP-100 TQFP-100 TQFP-100 TQFP-100 TQFP-100 TQFP-100
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
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