MOSEL VITELIC
V53C808H
HIGH PERFORMANCE
1M x 8 BIT EDO PAGE MODE
CMOS DYNAMIC RAM
OPTIONAL SELF REFRESH
35
35 ns
18 ns
14 ns
70 ns
PRELIMINARY
HIGH PERFORMANCE
Max. RAS Access Time, (t
RAC
)
Max. Column Address Access Time, (t
CAA
)
Min. Extended Data Out Mode Cycle Time, (t
PC
)
Min. Read/Write Cycle Time, (t
RC
)
40
40 ns
20 ns
15 ns
75 ns
45
45 ns
22 ns
17 ns
80 ns
50
50 ns
24 ns
19 ns
90 ns
Features
s
1M x 8-bit organization
s
EDO Page Mode for a sustained data rate
of 72 MHz
s
RAS access time: 35, 40, 45, 50 ns
s
Low power dissipation
s
Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh capability
s
Optional Self Refresh (V53C808SH)
s
Refresh Interval: 1024 cycles/16 ms
s
Available in 28-pin 400 mil SOJ package
s
Single +5V
±
10% Power Supply
s
TTL Interface
Description
The V53C808H is a ultra high speed 1,048,576 x
8 bit CMOS dynamic random access memory. The
V53C808H offers a combination of features: Page
Mode with Extended Data Output for high data
bandwidth, and Low CMOS standby current.
All inputs and outputs are TTL compatible. Input
and output capacitances are significantly lowered to
allow increased system performance. Page Mode
with Extended Data Output operation allows ran-
dom access of up to 1024 x 8 bits within a row with
cycle times as fast as 14 ns.
The V53C808H is ideally suited for graphics, dig-
ital signal processing and high-performance com-
puting systems.
Device Usage Chart
Operating
Temperature
Range
0
°
C to 70
°
C
Package Outline
K
•
T
•
35
•
Access Time (ns)
40
•
45
•
50
•
Power
Std.
•
Temperature
Mark
Blank
V53C808H Rev. 1.5 April 1998
1
MOSEL VITELIC
Part Name
V53C808HKxx
V53C808HTxx
V53C808SHKxx
V53C808SHTxx
V53C808H
Supply Voltage
5V
5V
5V
5V
Self Refresh
No Self Refresh
No Self Refresh
Optional Standard Self Refresh (16ms)
Optional Standard Self Refresh (16ms)
Package
SOJ
TSOP
SOJ
TSOP
Speed
35/40/45/50
35/40/45/50
35/40/45/50
35/40/45/50
V
5
3
C
8
0
8
S
H
FAMILY
DEVICE
SUPPLY
VOLTAGE
PKG
S (OPTIONAL STANDARD
SELF REFRESH)
SPEED
( t
RAC
)
TEMP.
PWR.
BLANK (0¡C to 70¡C)
BLANK (NORMAL)
35
40
45
50
(35 ns)
(40 ns)
(45 ns)
(50 ns)
H (5V)
K (SOJ)
808H-01
28-Pin Plastic SOJ
PIN CONFIGURATION
Top View
V
CC
I/O1
I/O2
I/O3
I/O4
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
808H-02
Pin Names
A
0
–A
9
RAS
Address Inputs
Row Address Strobe
Column Address Strobe
Write Enable
Output Enable
Data Input, Output
+5V Supply
0V Supply
No Connect
V
SS
I/O8
I/O7
I/O6
I/O5
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
CAS
WE
OE
I/O
1
–I/O
8
V
CC
V
SS
NC
400 mil
V53C808H Rev. 1.5 April 1998
2
MOSEL VITELIC
Absolute Maximum Ratings*
Ambient Temperature
Under Bias ................................. –10
°
C to +80
°
C
Storage Temperature (plastic) ..... –55
°
C to +125
°
C
Voltage Relative to V
SS
.................–1.0 V to +7.0 V
Data Output Current ..................................... 50 mA
Power Dissipation .......................................... 1.4 W
*Note:
Operation above Absolute Maximum Ratings can
adversely affect device reliability.
V53C808H
T
A
= 25
°
C, V
CC
= 5 V
±
10%, f = 1 MHz
Symbol
C
IN1
C
IN2
C
OUT
Parameter
Address Input
RAS, CAS, WE, OE
Data Input/Output
Typ.
3
4
5
Max.
4
5
7
Unit
pF
pF
pF
Capacitance*
* Note:
Capacitance is sampled and not 100% tested
Block Diagram
1M x 8
OE
WE
CAS
RAS
RAS CLOCK
GENERATOR
CAS CLOCK
GENERATOR
WE CLOCK
GENERATOR
OE CLOCK
GENERATOR
VCC
VSS
DATA I/O BUS
COLUMN DECODERS
Y0 -Y 9
I/O 1
I/O 2
I/O 3
SENSE AMPLIFIERS
1024 x 8
I/O
BUFFER
I/O 4
I/O 5
I/O 6
I/O 7
I/O 8
REFRESH
COUNTER
10
A0
A1
ADDRESS BUFFERS
AND PREDECODERS
X0 -X9
ROW
DECODERS
1024
•
•
•
A7
A9
MEMORY
ARRAY
1024 x 1024 x8
808H-04
V53C808H Rev. 1.5 April 1998
3
MOSEL VITELIC
DC and Operating Characteristics
T
A
= 0
°
C to 70
°
C, V
CC
= 5 V
±
10%, V
SS
= 0 V, unless otherwise specified.
Access
Time
V53C808H
Min.
–10
V53C808H
Symbol
I
LI
I
LO
I
CC1
Parameter
Input Leakage Current
(any input pin)
Output Leakage Current
(for High-Z State)
V
CC
Supply Current,
Operating
Typ.
Max.
10
Unit
m
A
m
A
mA
Test Conditions
V
SS
£
V
IN
£
V
CC
V
SS
£
V
OUT
£
V
CC
RAS, CAS at V
IH
t
RC
= t
RC
(min.)
Notes
–10
10
35
40
45
50
160
150
145
135
2
1, 2
I
CC2
I
CC3
V
CC
Supply Current,
TTL Standby
V
CC
Supply Current,
RAS-Only Refresh
35
40
45
50
mA
RAS, CAS at V
IH
other inputs
³
V
SS
t
RC
= t
RC
(min.)
2
160
150
145
135
95
90
85
80
2.0
mA
I
CC4
V
CC
Supply Current,
EDO Page Mode
Operation
35
40
45
50
mA
Minimum cycle
1, 2
I
CC5
I
CC6
V
CC
Supply Current,
Standby, Output Enabled
V
CC
Supply Current,
CMOS Standby
mA
RAS = V
IH
, CAS = V
IL
other inputs
³
V
SS
RAS
³
V
CC
– 0.2 V,
CAS
³
V
CC
– 0.2 V,
All other inputs
³
V
SS
CBR Cycle with t
RAS
³
t
RASS
(Min.) and CAS = V
IL
;
WE = V
CC
–0.2V; A0–A8 and
D
IN
= V
CC
–0.2V
1
2.0
mA
I
CC7
Self Refresh Current
400
m
A
V
CC
V
IL
V
IH
V
OL
V
OH
Supply Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
4.5
–1
2.4
5.0
5.5
0.8
V
CC
+ 1
0.4
V
V
V
V
V
I
OL
= 2 mA
I
OH
= –2 mA
3
3
2.4
V53C808H Rev. 1.5 April 1998
4
MOSEL VITELIC
AC Characteristics
T
A
= 0°C to 70°C, V
CC
= 5 V
±10%,
V
SS
= 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
35
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
V53C808H
40
45
50
Notes
Symbol
t
RAS
t
RC
t
RP
t
CSH
t
CAS
t
RCD
t
RCS
t
ASR
t
RAH
t
ASC
t
CAH
t
RSH (R)
t
CRP
t
RCH
t
RRH
t
ROH
t
OAC
t
CAC
t
RAC
t
CAA
t
LZ
t
HZ
t
AR
t
RAD
t
RSH (W)
t
CWL
t
WCS
t
WCH
t
WP
t
WCR
t
RWL
Parameter
RAS Pulse Width
Read or Write Cycle Time
RAS Precharge Time
CAS Hold Time
CAS Pulse Width
RAS to CAS Delay
Read Command Setup Time
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
Column Address Hold Time
RAS Hold Time (Read Cycle)
CAS to RAS Precharge Time
Read Command Hold Time
Referenced to CAS
Read Command Hold Time
Referenced to RAS
RAS Hold Time Referenced to OE
Access Time from OE
Access Time from CAS (EDO)
Access Time from RAS
Access Time from Column Address
CAS to Low-Z Output
Output buffer turn-off delay time
Column Address Hold Time from RAS
RAS to Column Address Delay Time
RAS or CAS Hold Time in Write Cycle
Write Command to CAS Lead Time
Write Command Setup Time
Write Command Hold Time
Write Pulse Width
Write Command Hold Time from RAS
Write Command to RAS Lead Time
Min. Max. Min. Max. Min. Max. Min. Max. Unit
35
70
25
35
7
16
0
0
6
0
4
14
5
0
23
75K
40
75
25
40
8
17
0
0
7
0
5
14
5
0
28
75K
45
80
25
45
9
18
0
0
8
0
6
15
5
0
32
75K
50
90
30
50
9
19
0
0
9
0
7
15
5
0
36
75K
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
5
15
0
0
0
0
ns
5
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
8
12
12
35
18
0
0
28
11
12
12
0
5
5
28
12
17
6
8
12
12
40
20
0
0
30
12
12
12
0
5
5
30
12
20
6
9
13
13
45
22
0
0
35
13
13
13
0
6
6
35
13
23
7
10
14
14
50
24
0
0
40
14
14
14
0
7
7
40
14
26
8
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12, 13
11
6, 7
6, 8, 9
6, 7, 10
16
16
V53C808H Rev. 1.5 April 1998
5