V58C2512404SBE5 datasheet, PDF

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V58C2512404SBE5: DescriptionDDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66; Categorystorage storage; File Size926KB，61 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V58C2512404SBE5 Overview

DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66

V58C2512404SBE5 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ProMOS Technologies Inc
Parts packaging code	TSSOP2
package instruction	TSSOP, TSSOP66,.46
Contacts	66
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
length	22.22 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	66
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.01 A
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	2.6 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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V58C2512(804/404/164)SB

HIGH PERFORMANCE 512 Mbit DDR SDRAM

4 BANKS X 16Mbit X 8 (804)

4 BANKS X 32Mbit X 4 (404)

4 BANKS X 8Mbit X 16 (164)

DDR400

Clock Cycle Time (t

CK2.5

)

Clock Cycle Time (t

CK3

)

System Frequency (f

CK max

)

6ns

5ns

200 MHz

DDR333

6ns

166 MHz

DDR266

7.5ns

133 MHz

Features

■

High speed data transfer rates with system frequency

up to 200MHz

■

Data Mask for Write Control

■

Four Banks controlled by BA0 & BA1

■

Programmable CAS Latency: 2.5, 3

■

Programmable Wrap Sequence: Sequential

or Interleave

■

Programmable Burst Length:

2, 4, 8 for Sequential Type

2, 4, 8 for Interleave Type

■

Automatic and Controlled Precharge Command

■

Power Down Mode

■

Auto Refresh and Self Refresh

■

Refresh Interval: 8192 cycles/64 ms

■

Available in 60 Ball FBGA AND 66 Pin TSOP II

■

SSTL-2 Compatible I/Os

■

Double Data Rate (DDR)

■

Bidirectional Data Strobe (DQS) for input and output

data, active on both edges

■

On-Chip DLL aligns DQ and DQs transitions with CK

transitions

■

Differential clock inputs CK and CK

■

Power Supply 2.5V ± 0.2V

■

Power Supply 2.6V ± 0.1V for DDR400

■

tRAS lockout supported

■

Concurrent auto precharge option is supported

*Note:

(-5) Supports PC3200 module with 3-3-3 timing

(-6) Supports PC2700 module with 2.5-3-3 timing

(-75) Supports PC2100 module with 2.5-3-3 timing

Description

The V58C2512(804/404/164)SB is a four bank DDR

DRAM organized as 4 banks x 16Mbit x 8 (804), 4 banks x

32Mbit x 4 (404), 4 banks x 8Mbit x 16 (164). The

V58C2512(804/404/164)SB achieves high speed data

transfer rates by employing a chip architecture that

prefetches multiple bits and then synchronizes the output

data to a system clock.

All of the control, address, circuits are synchronized

with the positive edge of an externally supplied clock. I/O

transactions are occurring on both edges of DQS.

Operating the four memory banks in an interleaved

fashion allows random access operation to occur at a

higher rate than is possible with standard DRAMs. A se-

quential and gapless data rate is possible depending on

burst length, CAS latency and speed grade of the device.

Device Usage Chart

Operating

Temperature

Range

0°C to 70°C

V58C2512(804/404/164)SB Rev.1.4 March 2007

Package Outline

JEDEC 66 TSOP II

60 FBGA

•

CK Cycle Time (ns)

-5

•

Power

Std.

•

-6

•

-75

•

Temperature

Mark

Blank

Recommended Resources

Pulse stretching circuit using a NAND gate

High frequency impedance matching amplifier

Natural wind timing generator circuit

Use headphones and light bulbs to form a simple circuit breaker

Solid State Open Delay Circuit Diagram

1.45～15V full sampling regulated power supply circuit

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

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