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DA22F2100L

Description
Silicon epitaxial planar type
CategoryDiscrete semiconductor    diode   
File Size224KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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DA22F2100L Overview

Silicon epitaxial planar type

DA22F2100L Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionR-PDSO-F2
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Doc No.
TT4-EA-12363
Revision.
3
Product Standards
Fast Recovery Diode
DA22F2100L
DA22F2100L
Silicon epitaxial planar type
Unit: mm
For high speed switching circuits
Features
Small reverse current IR
Short reverse recovery time trr
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1.6
2
0.13
Marking Symbol: 3Q
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1
0.55
1. Cathode
2. Anode
Panasonic
JEITA
Code
2.6
3.5
0.8
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Forward current
Non-repetitive peak forward surge current
*1
Junction temperature
Operating ambient temperature
Storage temperature
VRRM
VRSM
IF
IFSM
Tj
Topr
Tstg
Mini2-F4-B
SC-109D
SOD-123
Rating
200
200
1.0
15
-40 to +150
-40 to +85
-40 to +150
Unit
V
V
A
A
°C
°C
°C
Internal Connection
2
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1
Page 1 of 4
Established : 2010-02-12
Revised
: 2013-05-23

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