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SR009HB0

Description
Rectifier Diode, Schottky, 1 Element, 0.5A, 90V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size196KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SR009HB0 Overview

Rectifier Diode, Schottky, 1 Element, 0.5A, 90V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

SR009HB0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage90 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
SR002 thru SR010
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
MECHANICAL DATA
Case:DO-204AL(DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:Matte
tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:0.33
gram (approximately)
DO-204AL(DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.5 A
Maximum reverse current @ rated VR
T
A
=25
T
A
=100℃
T
A
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.55
0.5
I
R
Cj
R
θJA
T
J
T
STG
- 55 to + 125
10
-
110
50
- 55 to + 150
- 55 to + 150
5
-
80
SR
002
20
14
20
SR
003
30
21
30
SR
004
40
28
40
SR
005
50
35
50
0.5
30
0.70
0.85
0.1
-
2
65
O
SR
006
60
42
60
SR
009
90
63
90
SR
010
100
70
100
UNIT
V
V
V
A
A
V
mA
pF
C/W
O
O
Typical Junction Capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1:Pulse test with PW=300u sec, 1% duty cycle
C
C
Note 2:Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number:DS_D1308043
Version:F13
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