FHT9012O datasheet, PDF - EEWORLD Datasheet

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FHT9012O: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size90KB，1 Pages; ManufacturerFenghua (HK) Electronics Ltd.

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FHT9012O Overview

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

FHT9012O Parametric

Parameter Name	Attribute value
Maker	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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General Purpose Transistors

DESCRIPTION & FEATURES

概述及特點

Excellent h

FE

Linearity h

FE

線性特性極½

h

FE

（2）=25（Min.）at

V

CE

=-6V, I

C

=-400mA.

Complementary to FHT9013

與

FHT9013

互補

SOT-23

FHT9012

PIN ASSIGNMENT

引腳說明

PIN NAME

FUNCTION

PIN NUMBER

引腳序號

管腳符號

功½

SOT-23

B

1

BASE

E

2

EMITTER

C

3

COLLECTOR

MAXIMUM RATINGS(T

a

=25℃)

最大額定值

CHARACTERISTIC

特性參數

Symbol

符號

Rating

額定值

Unit

單½

Collector-Emitter Voltage

集電極-發射極電壓

-40

Vdc

V

CEO

Collector-Base Voltage

集電極-基極電壓

V

CBO

-30

Vdc

Emitter-Base Voltage

發射極-基極電壓

-5.0

Vdc

V

EBO

Collector Current—Continuous

集電極電流-連續

-500

mAdc

I

C

Base Current

基極電流

-50

mAdc

I

B

THERMAL CHARACTERISTICS

熱特性

CHARACTERISTIC

特性參數

Symbol

符號

Max

最大值

Unit

單½

Collector Power Dissipation

集電極耗散功率

P

c

300

mW

150，

T

j

,

Junction and Storage Temperature結溫和儲存溫度

℃

-55 ~150

T

stg

DEVICE MARKING

打標

h

FE

（1）FHT9012O=5O(70~140),

FHT9012Y=5Y(120~240), FHT9012G=5G(200~400)

ELECTRICAL CHARACTERISTICS

電特性

(T

A

=25℃ unless otherwise noted

如無特殊說明，溫度為

25℃)

Symbol

Test Condition

Min

Type

Max

Unit

Characteristic

特性參數

符號

測試條件

最小值典型值最大值單½

Collector Cutoff Current

I

CBO

V

CB

=-35V,I

E

=0

—

-0.1

µA

集電極截止電流

Emitter Cutoff Current

I

EBO

V

EB

=-5V,I

C

=0

—

-0.1

µA

發射極截止電流

Collector-Emitter Breakdown Voltage

集電極-發射極擊穿電壓

Collector-Base Breakdown Voltage

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

h

FE

(1)

h

FE

(2)

V

CE(sat)

V

BE

f

T

C

ob

I

C

=-1.0mA

I

C

=-100µA

I

E

=-100µA

V

CE

=-1V,I

C

=-100mA

V

CE

=-6V,I

C

=-400mA

I

C

=-500mA,I

B

=-50mA

V

CE

=-1V,I

C

=-100mA

V

CE

=-6V,I

C

=-20mA

V

CB

=-6V,I

E

=0,f=1MHz

-30

-40

-5

70

25

—

150

—

-0.8

200

13

—

400

—

-0.6

-1.0

—

V

—

V

MHz

pF

集電極-基極擊穿電壓

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓

DC Current Gain

直流電流增益

Collector-Emitter Saturation Voltage

集電極-發射極½和壓降

Base-Emitter Voltage

基極-發射極電壓

Transition Frequency

特徵頻率

Collector Output Capacitance

輸出電容

1

FHT9012O Related Products

	FHT9012O	FHT9012	FHT9012G	FHT9012Y
Description	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Maker	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	25	200	120
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.15 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz

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