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IRF7470TRPBF

Description
10 A, 40 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
CategoryDiscrete semiconductor    The transistor   
File Size126KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

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IRF7470TRPBF Overview

10 A, 40 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

IRF7470TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeSOIC
package instructionSO-8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)300 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.013 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)85 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD- 95276
SMPS MOSFET
Applications
l
High Frequency DC-DC Converters
with Synchronous Rectification
l
Lead-Free
Benefits
l
l
l
IRF7470PbF
HEXFET
®
Power MOSFET
V
DSS
40V
R
DS(on)
max
13mΩ
I
D
10A
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
7
A
A
D
D
D
D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
ƒ
Maximum Power Dissipation
ƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
40
± 12
10
8.5
85
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
„
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes

through
„
are on page 8
www.irf.com
1
8/11/04
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