KST3906 — PNP Epitaxial Silicon Transistor
September 2010
KST3906
PNP Epitaxial Silicon Transistor
Features
• General Purpose Transistor
3
Marking
2
1
2A
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Value
-40
-40
-5
-200
350
150
Unit
V
V
V
mA
mW
°C
Electrical Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
T
a
=25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
Test Condition
Min.
-40
-40
-5
Max.
Unit
V
V
V
nA
I
C
= -10μA, I
E
=0
I
C
= -1.0mA, I
B
=0
I
E
= -10μA, I
C
=0
V
CE
= -30V, V
EB
= -3V
V
CE
= -1V, I
C
= -0.1mA
V
CE
= -1V, I
C
= -1mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -100mA
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
V
BE
(sat) * Base-Emitter Saturation Voltage
I
C
= -50mA, I
B
= -5.0mA
Current Gain Bandwidth Product
I
C
= -10mA, V
CE
= -20V, f=100MHz
f
T
Output Capacitance
V
CB
= -5V, I
E
=0, f=1.0MHz
C
ob
NF
Noise Figure
I
C
= -100μA, V
CE
= -5V
R
S
=1KΩ, f=10Hz to 15.7KHz
Turn On Time
V
CC
= -3V, V
BE
= -0.5V
t
ON
I
C
= -10mA, I
B1
= -1mA
Turn Off Time
V
CC
= -3V, I
C
= -10mA
t
OFF
I
B1
=I
B2
= -1mA
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
-50
60
80
100
60
30
300
-0.65
250
-0.25
-0.4
-0.85
-0.95
4.5
4
70
300
V
V
V
V
MHz
pF
dB
ns
ns
© 2010 Fairchild Semiconductor Corporation
KST3906 Rev. A3
1
www.fairchildsemi.com
KST3906 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
V
CE
= -1V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
-1
V
BE
(sat)
10
-0.1
V
CE
(sat)
1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
1000
I
E
= 0
f = 1MHz
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
V
CE
= -20V
C
ob
[pF], CAPACITANCE
10
100
1
0.1
-1
-10
-100
10
-0.1
-1
-10
-100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
© 2010 Fairchild Semiconductor Corporation
KST3906 Rev. A3
2
www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I49
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